NP36N055HHE Datasheet PDF - Renesas
| Part Number | NP36N055HHE | |
| Description | N-CHANNEL POWER MOSFET | |
| Manufacturers | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP36N055HHE, NP36N055IHE, NP36N055SHE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rated
• Super low on-state resistance
RDS(on) = 14 mΩ MAX. (VGS = 10 V, ID = 18 A)
• Low Ciss : Ciss = 2300 pF TYP.
• Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP36N055HHE
NP36N055IHE Note
TO-251 (JEITA) / MP-3
TO-252 (JEITA) / MP-3Z
NP36N055SHE
Note Not for new design.
TO-252 (JEDEC) / MP-3ZK
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55
Gate to Source Voltage
VGSS
±20
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±36
±144
Total Power Dissipation (TA = 25°C)
PT
1.2
Total Power Dissipation (TC = 25°C)
PT
120
Single Avalanche Current Note2
IAS 36 / 33
Single Avalanche Energy Note2
EAS 12 / 108
Channel Temperature
Tch 175
Storage Temperature
Tstg –55 to + 175
V
V
A
A
W
W
A
mJ
°C
°C
(TO-251)
(TO-252)
Notes 1. PW ≤ 10 µ s, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 → 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.25 °C/W
125 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14152EJ4V0DS00 (4th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
1999, 2005
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NP36N055HHE, NP36N055IHE, NP36N055SHE
Figure12. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
45
Pulsed
40
35
30
25
20
VGS = 10 V
15
10
5
ID = 18 A
0
−50 0 50 100 150
Tch - Channel Temperature - ˚C
10000
1000
Figure14. CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0 V
f = 1 MHz
Ciss
100
Coss
Crss
Figure13. SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
100 Pulsed
10 VGS = 10 V
1
VGS = 0 V
0.1
0.01
0
0.5 1.0 1.5
VSD - Source to Drain Voltage - V
Figure15. SWITCHING CHARACTERISTICS
1000
tf
100
tr
10
td(off)
td(on)
100.1
1 10
VDS - Drain to Source Voltage - V
100
1000
Figure16. REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 100 A/µs
VGS = 0 V
100
10
1
0.1 1.0 10 100
IF - Drain Current - A
1
0.1 1 10 100
ID - Drain Current - A
Figure17. DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80 16
70 14
60 VDD = 44 V
28 V
12
VGS
50 11 V
10
40 8
30 6
20 4
10 VDS
2
ID = 36 A
0
0
0
10 20 30 40 50 60 70 80
QG - Gate Charge - nC
Data Sheet D14152EJ4V0DS
5
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