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NP36N055SHE PDF даташит

Спецификация NP36N055SHE изготовлена ​​​​«Renesas» и имеет функцию, называемую «N-CHANNEL POWER MOSFET».

Детали детали

Номер произв NP36N055SHE
Описание N-CHANNEL POWER MOSFET
Производители Renesas
логотип Renesas логотип 

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NP36N055SHE Даташит, Описание, Даташиты
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP36N055HHE, NP36N055IHE, NP36N055SHE
SWITCHING
N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on) = 14 mMAX. (VGS = 10 V, ID = 18 A)
Low Ciss : Ciss = 2300 pF TYP.
Built-in gate protection diode
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP36N055HHE
NP36N055IHE Note
TO-251 (JEITA) / MP-3
TO-252 (JEITA) / MP-3Z
NP36N055SHE
Note Not for new design.
TO-252 (JEDEC) / MP-3ZK
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
55
Gate to Source Voltage
VGSS
±20
Drain Current (DC)
Drain Current (Pulse) Note1
ID(DC)
ID(pulse)
±36
±144
Total Power Dissipation (TA = 25°C)
PT
1.2
Total Power Dissipation (TC = 25°C)
PT
120
Single Avalanche Current Note2
IAS 36 / 33
Single Avalanche Energy Note2
EAS 12 / 108
Channel Temperature
Tch 175
Storage Temperature
Tstg –55 to + 175
V
V
A
A
W
W
A
mJ
°C
°C
(TO-251)
(TO-252)
Notes 1. PW 10 µ s, Duty Cycle 1%
2. Starting Tch = 25°C, RG = 25 Ω, VGS = 20 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.25 °C/W
125 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14152EJ4V0DS00 (4th edition)
Date Published July 2005 NS CP(K)
Printed in Japan
The mark shows major revised points.
1999, 2005









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NP36N055SHE Даташит, Описание, Даташиты
NP36N055HHE, NP36N055IHE, NP36N055SHE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
IDSS
IGSS
VGS(th)
| yfs |
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
VDS = 55 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
VDS = 10 V, ID = 18 A
VGS = 10 V, ID = 18 A
VDS = 25 V
VGS = 0 V
f = 1 MHz
VDD = 28 V, ID = 18 A
VGS = 10 V
RG = 1
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
VDD = 44 V
VGS = 10 V
ID = 18 A
IF = 36 A, VGS = 0 V
IF = 36 A, VGS = 0 V
di/dt = 100 A/µs
MIN.
2.0
9
TYP.
3.0
18
11
2300
370
180
25
16
52
14
44
10
17
1.0
43
64
MAX.
10
±10
4.0
14
3500
560
320
54
39
100
35
66
UNIT
µA
µA
V
S
m
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D14152EJ4V0DS









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NP36N055SHE Даташит, Описание, Даташиты
NP36N055HHE, NP36N055IHE, NP36N055SHE
TYPICAL CHARACTERISTICS (TA = 25°C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
100 120
100
80
80
60
60
40
40
20 20
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
Figure3. FORWARD BIAS SAFE OPERATING AREA
1000
100
10
R(aDSt(oVnG) SLi=m1it0edV)
ID(pulse)
ID(DC) DC
LiPmoitweder Dissipation
1 ms
PW =
100 µs
10
µs
0
0 25 50 75 100 125 150 175 200
TC - Case Temperature - ˚C
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
120
108 mJ
100
80
IAS = 33 A
60 36 A
1
TC = 25˚C
Single Pulse
0.1
0.1 1
10
VDS - Drain to Source Voltage - V
100
40
20 12 mJ
0
25 50 75 100 125 150 175
Starting Tch - Starting Channel Temperature - ˚C
1000
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100 Rth(ch-A) = 125 ˚C/W
10
1 Rth(ch-C) = 1.25 ˚C/W
0.1
0.01
10 µ
100 µ 1 m
10 m 100 m
1
PW - Pulse Width - s
Single Pulse
TC = 25˚C
10 100 1000
Data Sheet D14152EJ4V0DS
3










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