NCV8402DDR2G PDF даташит
Спецификация NCV8402DDR2G изготовлена «ON Semiconductor» и имеет функцию, называемую «Dual Self-Protected Low-Side Driver». |
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Детали детали
Номер произв | NCV8402DDR2G |
Описание | Dual Self-Protected Low-Side Driver |
Производители | ON Semiconductor |
логотип |
10 Pages
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NCV8402D, NCV8402AD
Dual Self-Protected
Low-Side Driver with
Temperature and Current
Limit
NCV8402D/AD is a dual protected Low−Side Smart Discrete device.
The protection features include overcurrent, overtemperature, ESD and
integrated Drain−to−Gate clamping for overvoltage protection. This
device offers protection and is suitable for harsh automotive
environments.
Features
• Short−Circuit Protection
• Thermal Shutdown with Automatic Restart
• Overvoltage Protection
• Integrated Clamp for Inductive Switching
• ESD Protection
• dV/dt Robustness
• Analog Drive Capability (Logic Level Input)
• AEC−Q101 Qualified and PPAP Capable
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 1
1
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V(BR)DSS
(Clamped)
42 V
RDS(ON) TYP
165 mW @ 10 V
ID MAX
2.0 A*
*Max current limit value is dependent on input
condition.
Drain
Gate
Input
Overvoltage
Protection
ESD Protection
Temperature Current Current
Limit
Limit
Sense
Source
MARKING DIAGRAM
8
1
SO−8
CASE 751
STYLE 11
8
xxxxxx
ALYW
G
1
xxxxxx = V8402D or 8402AD
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
PIN ASSIGNMENT
1
Source 1
Gate 1
Source 2
Gate 2
8
Drain 1
Drain 1
Drain 2
Drain 2
ORDERING INFORMATION
Device
Package
Shipping†
NCV8402DDR2G SOIC−8 2500/Tape & Reel
NCV8402ADDR2G (Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NCV8402D/D
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NCV8402D, NCV8402AD
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage Internally Clamped
VDSS
42 V
Drain−to−Gate Voltage Internally Clamped
(RG = 1.0 MW)
VDGR
42 V
Gate−to−Source Voltage
VGS
"14
V
Continuous Drain Current
ID Internally Limited
Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
PD
0.8 W
1.62
Thermal Resistance
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
RRqqJJAA
157 °C/W
77
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 32 V, VG = 5.0 V, IPK = 1.0 A, L = 300 mH, RG(ext) = 25 W)
EAS 150 mJ
Load Dump Voltage
(VGS = 0 and 10 V, RI = 2.0 W, RL = 9.0 W, td = 400 ms)
VLD
87 V
Operating Junction and Storage Temperature
TJ, Tstg
−55 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Surface−mounted onto min pad FR4 PCB, (Cu area = 40 sq. mm, 1 oz.).
2. Surface−mounted onto 1″ sq. FR4 board (Cu area = 625 sq. mm, 2 oz.).
+
ID
IG
+
VGS
GATE
DRAIN
SOURCE
VDS
−−
Figure 1. Voltage and Current Convention
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NCV8402D, NCV8402AD
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Test Condition
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(Note 3)
Zero Gate Voltage Drain Current
VGS = 0 V, ID = 10 mA, TJ = 25°C
VGS = 0 V, ID = 10 mA, TJ = 150°C
(Note 5)
VGS = 0 V, VDS = 32 V, TJ = 25°C
VGS = 0 V, VDS = 32 V, TJ = 150°C
(Note 5)
V(BR)DSS
IDSS
Gate Input Current
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Gate Threshold Temperature Coefficient
Static Drain−to−Source On−Resistance
VDS = 0 V, VGS = 5.0 V
VGS = VDS, ID = 150 mA
VGS = 10 V, ID = 1.7 A, TJ = 25°C
VGS = 10 V, ID = 1.7 A, TJ = 150°C
(Note 5)
IGSSF
VGS(th)
VGS(th)/TJ
RDS(on)
VGS = 5.0 V, ID = 1.7 A, TJ = 25°C
VGS = 5.0 V, I(DN=ot1e.75)A, TJ = 150°C
VGS = 5.0 V, ID = 0.5 A, TJ = 25°C
VGS = 5.0 V, ID = 0.5 A, TJ = 150°C
(Note 5)
Source−Drain Forward On Voltage
VGS = 0 V, IS = 7.0 A
VSD
SWITCHING CHARACTERISTICS (Note 5)
Turn−ON Time (10% VIN to 90% ID)
Turn−OFF Time (90% VIN to 10% ID)
Slew−Rate ON (70% VDS to 50% VDS)
Slew−Rate OFF (50% VDS to 70% VDS)
VGS = 10 V, VDD = 12 V
ID = 2.5 A, RL = 4.7 W
VGS = 10 V, VDD = 12 V,
RL = 4.7 W
tON
tOFF
−dVDS/dtON
dVDS/dtOFF
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 4)
Current Limit
VDS = 10 V, VGS = 5.0 V, TJ = 25°C
ILIM
VDS = 10 V, VGS = 5.0 V, TJ = 150°C
(Note 5)
VDS = 10 V, VGS = 10 V, TJ = 25°C
VDS = 10 V, VGS = 10 V, TJ = 150°C
(Note 5)
Temperature Limit (Turn−off)
Thermal Hysteresis
Temperature Limit (Turn−off)
Thermal Hysteresis
VGS = 5.0 V (Note 5)
VGS = 5.0 V
VGS = 10 V (Note 5)
VGS = 10 V
TLIM(off)
DTLIM(on)
TLIM(off)
DTLIM(on)
GATE INPUT CHARACTERISTICS (Note 5)
Device ON Gate Input Current
Current Limit Gate Input Current
Thermal Limit Fault Gate Input Current
VGS = 5 V ID = 1.0 A
VGS = 10 V ID = 1.0 A
VGS = 5 V, VDS = 10 V
VGS = 10 V, VDS = 10 V
VGS = 5 V, VDS = 10 V
VGS = 10 V, VDS = 10 V
IGON
IGCL
IGTL
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Electro−Static Discharge Capability
Human Body Model (HBM)
ESD
Machine Model (MM)
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Fault conditions are viewed as beyond the normal operating range of the part.
5. Not subject to production testing.
Min
42
40
1.3
3.7
2.3
4.2
2.7
150
150
4000
400
Typ
46
45
0.25
1.1
50
1.8
4.0
165
305
195
360
190
350
1.0
25
120
0.8
0.3
4.3
3.0
4.8
3.6
175
15
165
15
50
400
0.05
0.4
0.15
0.7
Max Unit
55 V
55
4.0 mA
20
100 mA
2.2 V
6.0 −mV/°C
200 mW
400
230
460
230
460
V
ms
V/ms
5.0 A
3.7
5.4
4.5
200 °C
185
mA
mA
mA
V
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NCV8402DDR2G | Dual Self-Protected Low-Side Driver | ON Semiconductor |
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