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PDF NCV8402ADDR2G Data sheet ( Hoja de datos )
| Número de pieza | NCV8402ADDR2G | |
| Descripción | Dual Self-Protected Low-Side Driver | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NCV8402D, NCV8402AD
Dual Self-Protected
Low-Side Driver with
Temperature and Current
Limit
NCV8402D/AD is a dual protected Low−Side Smart Discrete device.
The protection features include overcurrent, overtemperature, ESD and
integrated Drain−to−Gate clamping for overvoltage protection. This
device offers protection and is suitable for harsh automotive
environments.
Features
• Short−Circuit Protection
• Thermal Shutdown with Automatic Restart
• Overvoltage Protection
• Integrated Clamp for Inductive Switching
• ESD Protection
• dV/dt Robustness
• Analog Drive Capability (Logic Level Input)
• AEC−Q101 Qualified and PPAP Capable
• NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Switch a Variety of Resistive, Inductive and Capacitive Loads
• Can Replace Electromechanical Relays and Discrete Circuits
• Automotive / Industrial
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 1
1
http://onsemi.com
V(BR)DSS
(Clamped)
42 V
RDS(ON) TYP
165 mW @ 10 V
ID MAX
2.0 A*
*Max current limit value is dependent on input
condition.
Drain
Gate
Input
Overvoltage
Protection
ESD Protection
Temperature Current Current
Limit
Limit
Sense
Source
MARKING DIAGRAM
8
1
SO−8
CASE 751
STYLE 11
8
xxxxxx
ALYW
G
1
xxxxxx = V8402D or 8402AD
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = Pb−Free Package
PIN ASSIGNMENT
1
Source 1
Gate 1
Source 2
Gate 2
8
Drain 1
Drain 1
Drain 2
Drain 2
ORDERING INFORMATION
Device
Package
Shipping†
NCV8402DDR2G SOIC−8 2500/Tape & Reel
NCV8402ADDR2G (Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NCV8402D/D
1 page  
NCV8402D, NCV8402AD
TYPICAL PERFORMANCE CURVES
400
150°C, ID = 0.5 A
300 150°C, ID = 1.7 A
200 100°C, ID = 0.5 A
100°C, ID = 1.7 A
25°C, ID = 1.7 A
25°C, ID = 0.5 A
100
−40°C, ID = 1.7 A
−40°C, ID = 0.5 A
04 5 6 7 8 9 10
VGS (V)
Figure 8. RDS(on) vs. Gate−Source Voltage
350
150°C, VGS = 5 V
300
250 150°C, VGS = 10 V
100°C, VGS = 5 V
200
25°C, VGS = 5 V
100°C, VGS = 10 V
150 25°C, VGS = 10 V
100
50
0.2
−40°C, VGS = 5 V
−40°C, VGS = 10 V
0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
ID (A)
Figure 9. RDS(on) vs. Drain Current
2
2
1.75
ID = 1.7 A
1.5 VGS = 5 V
1.25
1
0.75
VGS = 10 V
0.5
−40 −20 0 20 40 60 80 100 120 140
T (°C)
Figure 10. Normalized RDS(on) vs. Temperature
8
7 −40°C
6 25°C
5
100°C
4 150°C
3
VDS = 10 V
2
5 6 7 8 9 10
VGS (V)
Figure 11. Current Limit vs. Gate−Source
Voltage
8
7
6 VGS = 10 V
5
4
VGS = 5 V
3
2 VDS = 10 V
−40 −20 0 20 40 60 80 100 120
TJ (°C)
Figure 12. Current Limit vs. Junction
Temperature
140
10
VGS = 0 V
1
150°C
0.1
0.01
0.001
100°C
25°C
−40°C
0.0001
10 15 20 25 30 35 40
VDS (V)
Figure 13. Drain−to−Source Leakage Current
http://onsemi.com
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