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PDF NCV8405A Data sheet ( Hoja de datos )

Número de pieza NCV8405A
Descripción Self-Protected Low Side Driver
Fabricantes ON Semiconductor 
Logotipo ON Semiconductor Logotipo



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No Preview Available ! NCV8405A Hoja de datos, Descripción, Manual

NCV8405, NCV8405A
Self-Protected Low Side
Driver with Temperature
and Current Limit
NCV8405/A is a three terminal protected LowSide Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated DraintoGate clamping for overvoltage
protection. This device is suitable for harsh automotive environments.
Features
ShortCircuit Protection
Thermal Shutdown with Automatic Restart
Overvoltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ100
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant
Typical Applications
Switch a Variety of Resistive, Inductive and Capacitive Loads
Can Replace Electromechanical Relays and Discrete Circuits
Automotive / Industrial
http://onsemi.com
V(BR)DSS
(Clamped)
42 V
RDS(ON) TYP
90 mW @ 10 V
ID MAX
6.0 A*
*Max current limit value is dependent on input
condition.
Drain
Gate
Input
Overvoltage
Protection
ESD Protection
Temperature Current Current
Limit
Limit
Sense
4
123
SOT223
CASE 318E
STYLE 3
4
Source
MARKING
DIAGRAM
DRAIN
4
AYW
xxxxx G
G
12 3
GATE
SOURCE
DRAIN
12
3
DPAK
CASE 369C
YWW
xxxxxG
A = Assembly Location
Y = Year
W, WW = Work Week
xxxxx = V8405 or 8405A
G or G = PbFree Package
(Note: Microdot may be in either location)
© Semiconductor Components Industries, LLC, 2012
October, 2012 Rev. 3
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
1 Publication Order Number:
NCV8405/D

1 page




NCV8405A pdf
NCV8405, NCV8405A
TYPICAL PERFORMANCE CURVES
300
250 150°C, ID = 1.4 A
200 150°C, ID = 0.5 A
150 100°C, ID = 1.4 A
100°C, ID = 0.5 A
100
40°C, ID = 1.4 A
50 40°C, ID = 0.5 A
345
6
25°C, ID = 1.4 A
25°C, ID = 0.5 A
789
VGS (V)
Figure 8. RDS(on) vs. GateSource Voltage
10
210
190
170
150
130
110
90
70
50
0.5
150°C, VGS = 10 V
150°C, VGS = 10 V
100°C, VGS = 5 V
100°C, VGS = 10 V
25°C, VGS = 5 V
25°C, VGS = 10 V
40°C, VGS = 5 V
40°C, VGS = 10 V
1 1.5 2 2.5 3 3.5 4 4.5
ID (A)
Figure 9. RDS(on) vs. Drain Current
5
2.0
1.75
ID = 1.4 A
1.5 VGS = 5 V
1.25
1.0
0.75
VGS = 10 V
0.5
40 20 0 20 40 60 80 100 120 140
T (°C)
Figure 10. Normalized RDS(on) vs. Temperature
15
13
40°C
11 25°C
9
100°C
7
150°C
5
VDS = 10 V
3
5 67 89
VGS (V)
Figure 11. Current Limit vs. GateSource
Voltage
10
14
12
10 VGS = 10 V
8
VGS = 5 V
6
4 VDS = 10 V
40 20 0 20 40 60 80 100 120 140
TJ (°C)
Figure 12. Current Limit vs. Junction
Temperature
160
10
VGS = 0 V
1
150°C
0.1 100°C
0.01
25°C
40°C
0.001
10 15 20 25 30 35 40
VDS (V)
Figure 13. DraintoSource Leakage Current
http://onsemi.com
5

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NCV8405A arduino
NCV8405, NCV8405A
PACKAGE DIMENSIONS
D
b1
4
HE
1 23
e1 e
0.08 (0003)
A1
E
b
A
q
L
SOT223 (TO261)
CASE 318E04
ISSUE N
C
L1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCH.
MILLIMETERS
DIM MIN
NOM MAX
A 1.50
1.63
1.75
A1 0.02
0.06
0.10
b 0.60 0.75 0.89
b1 2.90
3.06
3.20
c 0.24 0.29 0.35
D 6.30
6.50
6.70
E 3.30 3.50 3.70
e 2.20 2.30 2.40
e1 0.85
0.94
1.05
L 0.20 −−− −−−
L1 1.50
1.75
2.00
H E 6.70
7.00
7.30
q 0°
10°
MIN
0.060
0.001
0.024
0.115
0.009
0.249
0.130
0.087
0.033
0.008
0.060
0.264
0°
INCHES
NOM
0.064
0.002
0.030
0.121
0.012
0.256
0.138
0.091
0.037
−−−
0.069
0.276
STYLE 3:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
MAX
0.068
0.004
0.035
0.126
0.014
0.263
0.145
0.094
0.041
−−−
0.078
0.287
10°
SOLDERING FOOTPRINT*
3.8
0.15
2.0
0.079
2.3
0.091
2.3
0.091
6.3
0.248
2.0
0.079
1.5
0.059
ǒ ǓSCALE 6:1
mm
inches
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
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