|
|
PDF NCV8440A Data sheet ( Hoja de datos )
| Número de pieza | NCV8440A | |
| Descripción | Protected Power MOSFET | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NCV8440A (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
NCV8440, NCV8440A
Protected Power MOSFET
2.6 A, 52 V, N−Channel, Logic Level,
Clamped MOSFET w/ ESD Protection
Features
• Diode Clamp Between Gate and Source
• ESD Protection − Human Body Model 5000 V
• Active Over−Voltage Gate to Drain Clamp
• Scalable to Lower or Higher RDS(on)
• Internal Series Gate Resistance
• These are Pb−Free Devices
Benefits
• High Energy Capability for Inductive Loads
• Low Switching Noise Generation
Applications
• Automotive and Industrial Markets:
Solenoid Drivers, Lamp Drivers, Small Motor Drivers
• NCV Prefix for Automotive and Other Applications Requiring Site
and Control Changes
http://onsemi.com
VDSS
(Clamped)
52 V
RDS(ON) TYP
95 mW @ 10 V
ID MAX
2.6 A
Drain (Pins 2, 4)
Gate
(Pin 1)
Overvoltage
Protection
ESD Protection
Source (Pin 3)
MARKING
DIAGRAM
DRAIN
SOT−223
CASE 318E
STYLE 3
1 = Gate
2 = Drain
3 = Source
4
AYW
xxxxx G
G
1 23
GATE
SOURCE
DRAIN
A
Y
W
xxxxx
G
= Assembly Location
= Year
= Work Week
= V8440 or 8440A
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 8 of this data sheet.
© Semiconductor Components Industries, LLC, 2011
November, 2011 − Rev. 6
1
Publication Order Number:
NCV8440/D
1 page  
NCV8440, NCV8440A
TYPICAL PERFORMANCE CURVES
10 25°C
100°C
100
150°C
25°C
100°C
150°C
1
0.1 1
10 100
L, LOAD INDUCTANCE (mH)
Figure 1. Single Pulse Maximum Switch−off
Current vs. Load Inductance
10
VGS = 10 V
8
5V
TJ = 25°C
4V
3.8 V
3.6 V
6 3.4 V
4 3.2 V
3V
2 2.8 V
2.6 V
2.4 V
00 1 2 3 4 5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 3. On−State Output Characteristics
350
300
150°C
250
ID = 2 A
200
25°C
150
100
50 3
−40°C
4 5 6 7 8 9 10
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 5. RDS(on) vs. Gate−Source Voltage
10
0.1
1
10 100
L, LOAD INDUCTANCE (mH)
Figure 2. Single Pulse Maximum Switching
Energy vs. Load Inductance
10
VDS ≥ 10 V
8
6
4
2 TJ = 150°C
TJ = 25°C
01
1.5
2
TJ = −40°C
2.5 3
3.5
4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 4. Transfer Characteristics
300
250
150°C, VGS = 5 V
200
150°C, VGS = 10 V
150
25°C, VGS = 5 V
100
25°C, VGS = 10 V
−40°C, VGS = 5 V
−40°C, VGS = 10 V
501 2 3 4 5 6 7 8 9 10
ID, DRAIN CURRENT (A)
Figure 6. RDS(on) vs. Drain Current
http://onsemi.com
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet NCV8440A.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NCV8440 | Protected Power MOSFET | ON Semiconductor |
| NCV8440A | Protected Power MOSFET | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |