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PDF NGB8245N Data sheet ( Hoja de datos )
| Número de pieza | NGB8245N | |
| Descripción | Ignition IGBT | |
| Fabricantes | ON Semiconductor | |
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NGB8245N
Ignition IGBT
20 A, 450 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• D2PAK Package Offers Smaller Footprint for Increased Board Space
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• This is a Pb−Free Device
Applications
• Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
VCES
VCER
VGE
IC
500
500
"15
20
50
V
V
V
ADC
AAC
Continuous Gate Current
Transient Gate Current
(t ≤ 2 ms, f ≤ 100 Hz)
IG 1.0 mA
IG
20 mA
ESD (Charged−Device Model)
ESD
2.0 kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
8.0 kV
ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 150 W
1.0 W/°C
Operating & Storage Temperature Range
TJ, Tstg −55 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
20 A, 450 V
VCE(on) 3 1.24 V @
IC = 15 A, VGE . 4.0 V
C
G RG
RGE
E
MARKING DIAGRAM
4 Collector
1
D2PAK
CASE 418B
STYLE 4
NGB
8245NG
AYWW
13
Gate
2
Emitter
Collector
NGB8245N = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
NGB8245NT4G
Package
D2PAK
(Pb−Free)
Shipping†
800 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2012
September, 2012 − Rev. 2
1
Publication Order Number:
NGB8245N/D
1 page  
NGB8245N
TYPICAL ELECTRICAL CHARACTERISTICS
45
40 VCE = 5 V
35
30
25
10000
1000
100
VCE = −24 V
20
15 TJ = 25°C
10
5 TJ = 175°C
0 TJ = −40°C
0 0.5 1 1.5 2 2.5 3 3.5 4
VGE, GATE TO EMITTER VOLTAGE (V)
10
VCE = 200 V
1.0
0.1
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Transfer Characteristics
Figure 8. Collector−to−Emitter Leakage
Current vs. Temperature
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0−50
Mean + 4 s
Mean − 4 s
Mean
−25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
175
Figure 9. Gate Threshold Voltage vs.
Temperature
10000
1000
100
10
1.0
0.1
0
Ciss
Coss
Crss
5 10 15 20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 10. Capacitance vs.
Collector−to−Emitter Voltage
25
12
10 tfall
8
tdelay
6
VCC = 300 V
4 VGE = 5.0 V
RG = 1000 W
2 IC = 9.0 A
RL = 33 W
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Resistive Switching Fall Time vs.
Temperature
12
VCC = 300 V
10 VGE = 5.0 V
RG = 1000 W
8
IC = 9.0 A
L = 300 mH
6
4
tdelay
tfall
2
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Inductive Switching Fall Time vs.
Temperature
http://onsemi.com
5
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| PDF Descargar | [ Datasheet NGB8245N.PDF ] | |
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