NGB8207BNT4G PDF даташит
Спецификация NGB8207BNT4G изготовлена «ON Semiconductor» и имеет функцию, называемую «Ignition IGBT». |
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Детали детали
Номер произв | NGB8207BNT4G |
Описание | Ignition IGBT |
Производители | ON Semiconductor |
логотип |
7 Pages
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NGB8207N, NGB8207BN
Ignition IGBT
20 A, 365 V, N−Channel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Minimum Avalanche Energy − 500 mJ
• Gate Resistor (RG) = 70 W
• These are Pb−Free Devices
Applications
• Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
Continuous Gate Current
Transient Gate Current (t ≤ 2 ms, f ≤ 100 Hz)
ESD (Charged−Device Model)
VCES
VGE
IC
IG
IG
ESD
365
$15
20
50
1.0
20
2.0
V
V
AADACC
mA
mA
kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
V
Total Power Dissipation @ TC = 25°C
Derate above 25°C (Note 1)
PD 165 W
1.1 W/°C
Operating & Storage Temperature Range
TJ, Tstg
−55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Assuming infinite heatsink Case−to−Ambient
© Semiconductor Components Industries, LLC, 2011
December, 2011 − Rev. 1
1
http://onsemi.com
20 AMPS, 365 VOLTS
VCE(on) = 1.5 V Typ @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
E
D2PAK
CASE 418B
STYLE 4
1 MARKING DIAGRAM
4
Collector
NGB
8207xG
AYWW
13
Gate
2
Emitter
Collector
NGB8207x = Device Code
x = N or B
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NGB8207NT4G D2PAK 800 / Tape & Reel
(Pb−Free)
NGB8207BNT4G D2PAK 800 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NGB8207N/D
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NGB8207N, NGB8207BN
UNCLAMPED COLLECTOR−TO−EMITTER AVALANCHE CHARACTERISTICS (−55° ≤ TJ ≤ 175°C)
Characteristic
Symbol
Value
Single Pulse Collector−to−Emitter Avalanche Energy
VCC = 50 V, VGE = 10 V, Pk IL = 16.5 A, L = 3.7 mH, Rg = 1 kW Starting TJ = 25°C
VCC = 50 V, VGE = 10 V, Pk IL = 10 A, L = 6.1 mH, Rg = 1 kW Starting TJ = 125°C
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
EAS
EAS(R)
500
306
2000
THERMAL CHARACTERISTICS
Thermal Resistance, Junction−to−Case
RqJC
Thermal Resistance, Junction−to−Ambient (Note 2)
RqJA
Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 3)
TL
2. When surface mounted to an FR4 board using the minimum recommended pad size.
3. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
0.9
50
275
Unit
mJ
mJ
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
Collector−Emitter Clamp Voltage
Zero Gate Voltage Collector Current
Reverse Collector−Emitter Clamp Voltage
Symbol Test Conditions
BVCES
ICES
IC = 2.0 mA
IC = 10 mA
VVCGEE==204VV
BVCES(R)
VCE = 250 V
VGE = 0 V
IC = −75 mA
Reverse Collector−Emitter Leakage Current
ICES(R)
VCE = −24 V
Gate−Emitter Clamp Voltage
Gate−Emitter Leakage Current
Gate Resistor
Gate−Emitter Resistor
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
BVGES
IGES
RG
RGE
IG = $5.0 mA
VGE = $10 V
VGE(th)
IC = 1.0 mA
VGE = VCE
Threshold Temperature Coefficient (Negative)
Collector−to−Emitter On−Voltage
VCE(on)
IC = 6.0 A
VGE = 4.0 V
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
IC = 10 mA
VGE = 4.5 V
Temperature
TJ = −40°C to 175°C
TJ = −40°C to 175°C
TJ = 25°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = −40°C to 175°C
TJ = −40°C to 175°C
TJ = −40°C to 175°C
TJ = −40°C to 175°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
Min
325
340
−
70
−
30
30
29
0.10
20
−
12
500
14.25
1.2
0.6
1.4
12
1.0
0.8
1.15
−
Typ
350
365
0.1
1.0
85
0.25
33
36
32
0.25
25
0.03
13
700
70
16
1.5
0.8
1.7
12
1.3
1.1
1.4
0.62
Max Unit
375
390
2.0
5
150
2.5
39
42
35
0.85
40
0.3
14.5
1000
25
V
mA
V
mA
V
mA
W
kW
2.0 V
1.2
2.0
12 mV/°C
1.6 V
1.4
1.75
1.0
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NGB8207N, NGB8207BN
ELECTRICAL CHARACTERISTICS
Characteristic
ON CHARACTERISTICS (Note 4)
Collector−to−Emitter On−Voltage
Symbol Test Conditions
VCE(on)
VIGCE==84.0.0AV
VIGCE==130.7AV
IC = 10 A
VGE = 4.0 V
IC = 10 A
VGE = 4.5 V
IC = 15 A
VGE = 4.0 V
IC = 20 A
VGE = 4.0 V
Forward Transconductance
DYNAMIC CHARACTERISTICS
gfs IC = 6.0 A
VCE = 5.0 V
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
f = 10 kHz
VCE = 25 V
Turn−On Delay Time (Resistive)
Low Voltage
Rise Time (Resistive)
Low Voltage
td(on)
tr
VCE = 14 V
RL = 1.0 W
VGE = 5.0 V
RG = 1000 W
Turn−Off Delay Time (Resistive)
Low Voltage
Fall Time (Resistive)
Low Voltage
td(off)
tf
VCE = 14 V
RL = 1.0 W
VGE = 5.0 V
RG = 1000 W
Turn−On Delay Time (Resistive)
High Voltage
Rise Time (Resistive)
High Voltage
td(on)
tr
VCE = 300 V
RL = 46 W
VGE = 5.0 V
RG = 1000 W
Turn−Off Delay Time (Resistive)
High Voltage
Fall Time (Resistive)
High Voltage
td(off)
tf
VCE = 300 V
RL = 46 W
VGE = 5.0 V
RG = 1000 W
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Temperature
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
Min Typ Max Unit
1.1 1.5 1.7
V
1.0 1.3 1.6
1.2 1.5 1.85
1.2 1.6 1.9
1.1 1.45 1.8
1.3 1.7 2.0
1.1 1.5 1.85
1.1 1.4 1.75
1.35 1.7 2.1
1.2 1.5 1.8
1.1 1.4 1.7
1.2 1.6 2.0
1.45 1.85 2.15
1.6 1.9 2.4
1.5 1.9 2.25
1.6 2.1 2.6
2.0 2.4 3.1
1.6 2.1 2.5
− 15.8 − Mhos
750 810 900
75 90 105
4 7 12
pF
0.5 0.55 0.7 mSec
2.0 2.32 2.7
2.0 2.5 3.0
8.0 10 13
0.5 0.65 0.75
0.7 1.8 2.0
4.0 4.7 6.0
6.0 10 15
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