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NGB8207BNT4G PDF даташит

Спецификация NGB8207BNT4G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Ignition IGBT».

Детали детали

Номер произв NGB8207BNT4G
Описание Ignition IGBT
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NGB8207BNT4G Даташит, Описание, Даташиты
NGB8207N, NGB8207BN
Ignition IGBT
20 A, 365 V, NChannel D2PAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
Ideal for CoilonPlug and DriveronCoil Applications
GateEmitter ESD Protection
Temperature Compensated GateCollector Voltage Clamp Limits
Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Minimum Avalanche Energy 500 mJ
Gate Resistor (RG) = 70 W
These are PbFree Devices
Applications
Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
CollectorEmitter Voltage
GateEmitter Voltage
Collector CurrentContinuous
@ TC = 25°C Pulsed
Continuous Gate Current
Transient Gate Current (t 2 ms, f 100 Hz)
ESD (ChargedDevice Model)
VCES
VGE
IC
IG
IG
ESD
365
$15
20
50
1.0
20
2.0
V
V
AADACC
mA
mA
kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF
ESD
500
V
Total Power Dissipation @ TC = 25°C
Derate above 25°C (Note 1)
PD 165 W
1.1 W/°C
Operating & Storage Temperature Range
TJ, Tstg
55 to
+175
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Assuming infinite heatsink CasetoAmbient
© Semiconductor Components Industries, LLC, 2011
December, 2011 Rev. 1
1
http://onsemi.com
20 AMPS, 365 VOLTS
VCE(on) = 1.5 V Typ @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
E
D2PAK
CASE 418B
STYLE 4
1 MARKING DIAGRAM
4
Collector
NGB
8207xG
AYWW
13
Gate
2
Emitter
Collector
NGB8207x = Device Code
x = N or B
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
ORDERING INFORMATION
Device
Package
Shipping
NGB8207NT4G D2PAK 800 / Tape & Reel
(PbFree)
NGB8207BNT4G D2PAK 800 / Tape & Reel
(PbFree)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NGB8207N/D









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NGB8207BNT4G Даташит, Описание, Даташиты
NGB8207N, NGB8207BN
UNCLAMPED COLLECTORTOEMITTER AVALANCHE CHARACTERISTICS (55° ≤ TJ 175°C)
Characteristic
Symbol
Value
Single Pulse CollectortoEmitter Avalanche Energy
VCC = 50 V, VGE = 10 V, Pk IL = 16.5 A, L = 3.7 mH, Rg = 1 kW Starting TJ = 25°C
VCC = 50 V, VGE = 10 V, Pk IL = 10 A, L = 6.1 mH, Rg = 1 kW Starting TJ = 125°C
Reverse Avalanche Energy
VCC = 100 V, VGE = 20 V, Pk IL = 25.8 A, L = 6.0 mH, Starting TJ = 25°C
EAS
EAS(R)
500
306
2000
THERMAL CHARACTERISTICS
Thermal Resistance, JunctiontoCase
RqJC
Thermal Resistance, JunctiontoAmbient (Note 2)
RqJA
Maximum Temperature for Soldering Purposes, 0.125 in from case for 5 seconds (Note 3)
TL
2. When surface mounted to an FR4 board using the minimum recommended pad size.
3. For further details, see Soldering and Mounting Techniques Reference Manual: SOLDERRM/D.
0.9
50
275
Unit
mJ
mJ
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS
Characteristic
OFF CHARACTERISTICS
CollectorEmitter Clamp Voltage
Zero Gate Voltage Collector Current
Reverse CollectorEmitter Clamp Voltage
Symbol Test Conditions
BVCES
ICES
IC = 2.0 mA
IC = 10 mA
VVCGEE==204VV
BVCES(R)
VCE = 250 V
VGE = 0 V
IC = 75 mA
Reverse CollectorEmitter Leakage Current
ICES(R)
VCE = 24 V
GateEmitter Clamp Voltage
GateEmitter Leakage Current
Gate Resistor
GateEmitter Resistor
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
BVGES
IGES
RG
RGE
IG = $5.0 mA
VGE = $10 V
VGE(th)
IC = 1.0 mA
VGE = VCE
Threshold Temperature Coefficient (Negative)
CollectortoEmitter OnVoltage
VCE(on)
IC = 6.0 A
VGE = 4.0 V
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
IC = 10 mA
VGE = 4.5 V
Temperature
TJ = 40°C to 175°C
TJ = 40°C to 175°C
TJ = 25°C
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 40°C to 175°C
TJ = 40°C to 175°C
TJ = 40°C to 175°C
TJ = 40°C to 175°C
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 25°C
Min
325
340
70
30
30
29
0.10
20
12
500
14.25
1.2
0.6
1.4
12
1.0
0.8
1.15
Typ
350
365
0.1
1.0
85
0.25
33
36
32
0.25
25
0.03
13
700
70
16
1.5
0.8
1.7
12
1.3
1.1
1.4
0.62
Max Unit
375
390
2.0
5
150
2.5
39
42
35
0.85
40
0.3
14.5
1000
25
V
mA
V
mA
V
mA
W
kW
2.0 V
1.2
2.0
12 mV/°C
1.6 V
1.4
1.75
1.0
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NGB8207BNT4G Даташит, Описание, Даташиты
NGB8207N, NGB8207BN
ELECTRICAL CHARACTERISTICS
Characteristic
ON CHARACTERISTICS (Note 4)
CollectortoEmitter OnVoltage
Symbol Test Conditions
VCE(on)
VIGCE==84.0.0AV
VIGCE==130.7AV
IC = 10 A
VGE = 4.0 V
IC = 10 A
VGE = 4.5 V
IC = 15 A
VGE = 4.0 V
IC = 20 A
VGE = 4.0 V
Forward Transconductance
DYNAMIC CHARACTERISTICS
gfs IC = 6.0 A
VCE = 5.0 V
Input Capacitance
Output Capacitance
Transfer Capacitance
SWITCHING CHARACTERISTICS
CISS
COSS
CRSS
f = 10 kHz
VCE = 25 V
TurnOn Delay Time (Resistive)
Low Voltage
Rise Time (Resistive)
Low Voltage
td(on)
tr
VCE = 14 V
RL = 1.0 W
VGE = 5.0 V
RG = 1000 W
TurnOff Delay Time (Resistive)
Low Voltage
Fall Time (Resistive)
Low Voltage
td(off)
tf
VCE = 14 V
RL = 1.0 W
VGE = 5.0 V
RG = 1000 W
TurnOn Delay Time (Resistive)
High Voltage
Rise Time (Resistive)
High Voltage
td(on)
tr
VCE = 300 V
RL = 46 W
VGE = 5.0 V
RG = 1000 W
TurnOff Delay Time (Resistive)
High Voltage
Fall Time (Resistive)
High Voltage
td(off)
tf
VCE = 300 V
RL = 46 W
VGE = 5.0 V
RG = 1000 W
*Maximum Value of Characteristic across Temperature Range.
4. Pulse Test: Pulse Width v 300 mS, Duty Cycle v 2%.
Temperature
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 25°C
TJ = 175°C
TJ = 40°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
TJ = 25°C
Min Typ Max Unit
1.1 1.5 1.7
V
1.0 1.3 1.6
1.2 1.5 1.85
1.2 1.6 1.9
1.1 1.45 1.8
1.3 1.7 2.0
1.1 1.5 1.85
1.1 1.4 1.75
1.35 1.7 2.1
1.2 1.5 1.8
1.1 1.4 1.7
1.2 1.6 2.0
1.45 1.85 2.15
1.6 1.9 2.4
1.5 1.9 2.25
1.6 2.1 2.6
2.0 2.4 3.1
1.6 2.1 2.5
15.8 Mhos
750 810 900
75 90 105
4 7 12
pF
0.5 0.55 0.7 mSec
2.0 2.32 2.7
2.0 2.5 3.0
8.0 10 13
0.5 0.65 0.75
0.7 1.8 2.0
4.0 4.7 6.0
6.0 10 15
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Номер в каталогеОписаниеПроизводители
NGB8207BNT4GIgnition IGBTON Semiconductor
ON Semiconductor

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