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NP80N04NDG PDF даташит

Спецификация NP80N04NDG изготовлена ​​​​«Renesas» и имеет функцию, называемую «N-CHANNEL POWER MOS FET».

Детали детали

Номер произв NP80N04NDG
Описание N-CHANNEL POWER MOS FET
Производители Renesas
логотип Renesas логотип 

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NP80N04NDG Даташит, Описание, Даташиты
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N04MDG, NP80N04NDG, NP80N04PDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP80N04MDG, NP80N04NDG, and NP80N04PDG are N-channel MOS Field Effect Transistors designed for
high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP80N04MDG-S18-AY Note
NP80N04NDG-S18-AY Note
NP80N04PDG-E1B-AY Note
NP80N04PDG-E2B-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tube
50 p/tube
Tape
1000 p/reel
Note Pb-free (This product does not contain Pb in the external electrode.)
PACKAGE
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
TO-263 (MP-25ZP) typ. 1.5 g
FEATURES
Logic level
Super low on-state resistance
- NP80N04MDG, NP80N04NDG
RDS(on)1 = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 9.0 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
- NP80N04PDG
RDS(on)1 = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 8.7 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
High current rating
ID(DC) = ±80 A
Low input capacitance
Ciss = 4600 pF TYP.
Designed for automotive application and AEC-Q101 qualified
(TO-220)
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19795EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009









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NP80N04NDG Даташит, Описание, Даташиты
NP80N04MDG, NP80N04NDG, NP80N04PDG
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg
IAR
EAR
40
±20
±80
±300
115
1.8
175
55 to +175
37
137
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 μs, Duty Cycle 1%
2. Tch 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.30
83.3
°C/W
°C/W
2 Data Sheet D19795EJ1V0DS









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NP80N04NDG Даташит, Описание, Даташиты
NP80N04MDG, NP80N04NDG, NP80N04PDG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 40 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate to Source Threshold Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(th)
| yfs |
RDS(on)1
VDS = VGS, ID = 250 μA
VDS = 5 V, ID = 35 A
VGS = 10 V, ID = 40 A
NP80N04MDG, NP80N04NDG
MIN.
1.4
25
VGS = 10 V, ID = 40 A
NP80N04PDG
RDS(on)2
VGS = 4.5 V, ID = 35 A
NP80N04MDG, NP80N04NDG
VGS = 4.5 V, ID = 35 A
NP80N04PDG
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed test
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD = 20 V, ID = 40 A,
VGS = 10 V,
RG = 0 Ω
VDD = 32 V,
VGS = 10 V,
ID = 80 A
IF = 80 A, VGS = 0 V
IF = 80 A, VGS = 0 V,
di/dt = 100 A/μs
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
TYP.
63
3.7
3.2
4.8
4.3
4600
480
310
17
18
74
8
90
13
26
0.94
39
39
MAX.
1
±100
2.5
4.8
UNIT
μA
nA
V
S
mΩ
4.5 mΩ
9.0 mΩ
8.7 mΩ
6900
720
560
37
45
148
20
135
1.5
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
Data Sheet D19795EJ1V0DS
3










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