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NRVB140ESFT1G PDF даташит

Спецификация NRVB140ESFT1G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Surface Mount Schottky Power Rectifier».

Детали детали

Номер произв NRVB140ESFT1G
Описание Surface Mount Schottky Power Rectifier
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NRVB140ESFT1G Даташит, Описание, Даташиты
MBR140ESF, NRVB140ESF
Surface Mount
Schottky Power Rectifier
Plastic SOD123 Package
This device uses the Schottky Barrier principle with a large area
metaltosilicon power diode. Ideally suited for low voltage, high
frequency rectification or as free wheeling and polarity protection
diodes in surface mount applications where compact size and weight
are critical to the system. This package also provides an easy to work
with alternative to leadless 34 package style. Because of its small size,
it is ideal for use in portable and battery powered products such as
cellular and cordless phones, chargers, notebook computers, printers,
PDAs and PCMCIA cards. Typical applications are ACDC and
DCDC converters, reverse battery protection, and “Oring” of
multiple supply voltages and any other application where performance
and size are critical.
Features
Guardring for Stress Protection
Low Reverse Leakage
175°C Operating Junction Temperature
Epoxy Meets UL 94 V0 @ 0.125 in
Package Designed for Optimal Automated Board Assembly
ESD Rating:
Human Body Model = 3B
Machine Model = M4
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree and are RoHS Compliant*
Mechanical Characteristics
Device Marking: E4F
Polarity Designator: Cathode Band
Weight: 11.7 mg (approximately)
Case: Epoxy, Molded
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERES
40 VOLTS
SOD123FL
CASE 498
MARKING DIAGRAM
E4FMG
G
E4F = Specific Device Code
M = Date Code
G = PbFree Package)
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MBR140ESFT1G
MBR140ESFT3G
Package
SOD123FL
(PbFree)
SOD123FL
(PbFree)
Shipping
3,000 /
Tape & Reel **
10,000 /
Tape & Reel ***
NRVB140ESFT1G SOD123FL
3,000 /
(PbFree) Tape & Reel **
NRVB140ESFT3G SOD123FL
10,000 /
(PbFree) Tape & Reel ***
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
** 8 mm Tape, 7” Reel
*** 8 mm Tape, 13” Reel
© Semiconductor Components Industries, LLC, 2014
February, 2014 Rev. 3
1
Publication Order Number:
MBR140ESF/D









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NRVB140ESFT1G Даташит, Описание, Даташиты
MBR140ESF, NRVB140ESF
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak Repetitive Forward Current
NonRepetitive Peak Surge Current
(NonRepetitive peak surge current, halfwave, single phase, 60 Hz)
VRRM
VRWM
VR
IO
IFRM
IFSM
40
1.0
2.0
30
V
A
A
A
Storage Temperature
Tstg 55 to 175
°C
Operating Junction Temperature
TJ 55 to 175 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoLead (Note 1)
Thermal Resistance, JunctiontoLead (Note 2)
Thermal Resistance, JunctiontoAmbient (Note 1)
Thermal Resistance, JunctiontoAmbient (Note 2)
1. Mounted with minimum recommended pad size, PC Board FR4.
2. Mounted with 1 in. copper pad (Cu area 700 mm2).
Symbol
Rtjl
Rtjl
Rtja
Rtja
Value
26
21
325
82
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 3)
(IF = 1.0 A)
Maximum Instantaneous Reverse Current (Note 3)
(VR = 40 V)
3. Pulse Test: Pulse Width 250 ms, Duty Cycle 2%.
Symbol
VF
IR
Value
TJ = 25°C
0.56
TJ = 25°C
30
Unit
V
mA
http://onsemi.com
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NRVB140ESFT1G Даташит, Описание, Даташиты
MBR140ESF, NRVB140ESF
TYPICAL CHARACTERISTICS
10.0 10.0
1.0
TA = 150°C
TA = 125°C
TA = 85°C
TA = 150°C
1.0
TA = 125°C
TA = 85°C
0.10
0.0
TA = 25°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
1.0
TA = 25°C
0.10
0.00 0.10 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E03
1.E04
1.E05
1.E06
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
1.E01
1.E02
1.E03
1.E04
1.E05
TA = 150°C
TA = 125°C
TA = 85°C
TA = 25°C
1.E07
0
5 10 15 20 25 30 35
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
40
1.E06
0
5 10 15 20 25 30 35 40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Characteristics
TJ = 25°C
100
10
1 10
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
2.00
1.80
1.60
1.40
1.20
1.00
0.80
0.60
0.40
0.20
0.00
0
dc
SQUARE WAVE
RqJA = 82°C/W
20 40 60 80 100 120
TC, CASE TEMPERATURE (°C)
Figure 6. Current Derating, Case
140
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NRVB140ESFT1GSurface Mount Schottky Power RectifierON Semiconductor
ON Semiconductor

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