NRVTSM260E PDF даташит
Спецификация NRVTSM260E изготовлена «ON Semiconductor» и имеет функцию, называемую «Surface Mount Trench Schottky Power Rectifier». |
|
Детали детали
Номер произв | NRVTSM260E |
Описание | Surface Mount Trench Schottky Power Rectifier |
Производители | ON Semiconductor |
логотип |
5 Pages
No Preview Available ! |
NRVTSM260E
Surface Mount Trench
Schottky Power Rectifier
POWERMITE®
Power Surface Mount Package
Features
• Low Profile − Maximum Height of 1.1 mm
• Small Footprint − Footprint Area of 8.45 mm2
• Supplied in 12 mm Tape and Reel
• Low Thermal Resistance with Direct Thermal Path of Die on
Exposed Cathode Heat Sink
• Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
• Fast Switching with Exceptional Temperature Stability
• Low Power Loss and Lower Operating Temperature
• Higher Efficiency for Achieving Regulatory Compliance
• High Surge Capability
• NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free and Halide−Free Devices
Typical Applications
• Switching Power Supplies including Adapters & Flat Panel Displays
• High Frequency and DC−DC Converters
• Freewheeling and OR−ing diodes
• Reverse Battery Protection
• Instrumentation
Mechanical Characteristics:
• Powermite is JEDEC Registered as D0−216AA
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 16.3 mg (Approximately)
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Maximum for 10 Seconds
http://onsemi.com
SCHOTTKY TRENCH
RECTIFIER
2.0 AMPERES, 60 VOLTS
CATHODE
ANODE
POWERMITE
CASE 457
MARKING DIAGRAM
M
1 AACG
2
M
AAC
G
= Date Code
= Device Code
= Pb−Free Package
(Marking Style 1)
ORDERING INFORMATION
Device
Package
Shipping†
NRVTSM260ET1G Powermite 3000 / Tape &
(Pb−Free)
Reel
NRVTSM260ET3G Powermite 12000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
August, 2014 − Rev. 2
1
Publication Order Number:
NRVTSM260/D
No Preview Available ! |
NRVTSM260E
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
60 V
Average Rectified Forward Current
(TL = 162°C)
Peak Repetitive Forward Current
(Square Wave, 20 kHz, TL = 160°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IO
IFRM
IFSM
2.0 A
4.0 A
50 A
Storage and Operating Junction Temperature Range (Note 1)
Tstg, TJ
−55 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction−to−Lead (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 2)
Thermal Resistance, Junction−to−Ambient (Note 3)
ELECTRICAL CHARACTERISTICS
YJCL
RqJA
RqJA
8.6 °C/W
80 °C/W
237 °C/W
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 4)
(IF = 1 A, TJ = 25°C)
(IF = 2 A, TJ = 25°C)
VF V
0.55
0.65
(IF = 1 A, TJ = 125°C)
(IF = 2 A, TJ = 125°C)
0.47
0.58
Maximum Instantaneous Reverse Current (Note 4)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 125°C)
IR
12 mA
3.0 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Mounted with 700 mm2 copper pad size (Approximately 1 in2) 1 oz FR4 Board.
3. Mounted with pad size approximately 20 mm2 copper, 1 oz FR4 Board.
4. Pulse Test: Pulse Width ≤ 380 ms, Duty Cycle ≤ 2.0%.
http://onsemi.com
2
No Preview Available ! |
NRVTSM260E
TYPICAL CHARACTERISTICS
100 100
10 TJ = 150°C
TJ = 125°C
1
TJ = 175°C
TJ = 85°C
TJ = 25°C
TJ = −55°C
0.1
0.1 0.3 0.5 0.7 0.9 1.1 1.3
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
1.5
TJ = 175°C
10 TJ = 150°C
TJ = 125°C
1 TJ = 85°C
TJ = 25°C
TJ = −55°C
0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
TJ = 175°C
TJ = 150°C
TJ = 125°C
TJ = 85°C
1.E−06
TJ = 25°C
1.E−07
10
20 30 40 50 60
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
1.E−01
1.E−02
1.E−03
1.E−04
TJ = 175°C
TJ = 150°C
TJ = 125°C
TJ = 85°C
1.E−05
1.E−06
TJ = 25°C
1.E−07
10 20 30 40 50 60
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Characteristics
1000
100
TJ = 25°C
10
0.1
1 10
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
5
4
dc
3
SQUARE WAVE
2
RqJC = 25°C/W
1
0
100 110 120 130 140 150 160
TC, CASE TEMPERATURE (°C)
Figure 6. Current Derating
170
http://onsemi.com
3
Скачать PDF:
[ NRVTSM260E.PDF Даташит ]
Номер в каталоге | Описание | Производители |
NRVTSM260E | Surface Mount Trench Schottky Power Rectifier | ON Semiconductor |
NRVTSM260ET1G | Surface Mount Trench Schottky Power Rectifier | ON Semiconductor |
NRVTSM260ET3G | Surface Mount Trench Schottky Power Rectifier | ON Semiconductor |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |