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NRVBAF3200 PDF даташит

Спецификация NRVBAF3200 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Surface Mount Schottky Power Rectifier».

Детали детали

Номер произв NRVBAF3200
Описание Surface Mount Schottky Power Rectifier
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NRVBAF3200 Даташит, Описание, Даташиты
MBRAF3200, NRVBAF3200
Surface Mount
Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area
metal−to−silicon power diode. State−of−the−art geometry features
epitaxial construction with oxide passivation and metal overlay
contact. Ideally suited for low voltage, high frequency rectification, or
as free wheeling and polarity protection diodes in surface mount
applications where compact size and weight are critical to the system.
Features
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
Highly Stable Oxide Passivated Junction
Very High Blocking Voltage − 200 V
150°C Operating Junction Temperature
Guard−Ring for Stress Protection
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
This is a Pb−Free Device
Mechanical Charactersistics
Case: Epoxy, Molded, Epoxy Meets UL 94, V−0
Weight: 95 mg (approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Cathode Polarity Band
Device Meets MSL 1 Requirements
ESD Ratings: Machine Model = A
ESD Ratings: Human Body Model = 1B
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(TL = 100°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions
Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFSM
200
3.0
100
V
A
A
Operating Junction Temperature
TJ −65 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIER
3.0 AMPERE
200 VOLTS
SMA−FL
CASE 403AA
STYLE 6
MARKING DIAGRAM
AYWW
RACG
G
RAC
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
MBRAF3200T3G
Package
Shipping
SMA−FL 5000 / Tape & Reel
(Pb−Free)
NRVBAF3200T3G SMA−FL 5000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
October, 2014 − Rev. 2
1
Publication Order Number:
MBRAF3200T3/D









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NRVBAF3200 Даташит, Описание, Даташиты
MBRAF3200, NRVBAF3200
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Lead (Note 1
Thermal Resistance, Junction−to−Ambient (Note 1)
1. 1 inch square pad size (1 × 0.5 inch) for each lead on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic
Maximum Instantaneous Forward Voltage (Note 2)
(IF = 3.0 A, TJ = 25°C)
(IF = 4.0 A, TJ = 25°C)
(IF = 3.0 A, TJ = 150°C)
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 150°C)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
100
TC = 100°C
100
TC = 150°C
TC = 25°C
10 10
Symbol
RqJL
RqJA
Value
25
90
Symbol
VF
IR
Value
0.84
0.86
0.62
1.0
6.0
TC = 100°C
TC = 150°C
Unit
°C/W
Unit
V
mA
mA
TC = 25°C
11
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
VF, INSTANTANEOUS VOLTAGE (V)
Figure 1. Typical Forward Voltage
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
VF, INSTANTANEOUS VOLTAGE (V)
Figure 2. Maximum Forward Voltage
1.0E−03
1.0E−04
TC = 150°C
1.0E−05 TC = 100°C
1.0E−06
1.0E−07
1.0E−01
1.0E−02
1.0E−03
1.0E−04
TC = 150°C
TC = 25°C
1.0E−08 TC = 25°C
1.0E−05
1.0E−09
0
1.0E−06
20 40 60 80 100 120 140 160 180 200
0
VR, REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Current
20 40 60 80 100 120 140 160 180 200
VR, REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Current
http://onsemi.com
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NRVBAF3200 Даташит, Описание, Даташиты
1000
Typical Capacitance
at 0 V = 209 V
100
MBRAF3200, NRVBAF3200
5
TC = 25°C
DC
f = 1 MHz
4
3 SQUARE
WAVE
2
RqJL = 25°C/W
10
0 20 40 60 80 100 120 140 160 180 200
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Capacitance
1
0
0 20 40 60 80 100 120 140 160 180
TC, LEAD TEMPERATURE (C°)
Figure 6. Current Derating
100
50% Duty Cycle
20%
10 10%
5%
2%
1
1%
0.1
0.01 Single Pulse
0.001
0.0000001 0.000001
0.00001 0.0001 0.001
0.01
0.1
1 10
t, PULSE TIME (S)
Figure 7. Typical Transient Thermal Response, Junction−to−Ambient
100 1000
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NRVBAF3200Surface Mount Schottky Power RectifierON Semiconductor
ON Semiconductor
NRVBAF3200T3GSurface Mount Schottky Power RectifierON Semiconductor
ON Semiconductor

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