SBRS81100T3G PDF даташит
Спецификация SBRS81100T3G изготовлена «ON Semiconductor» и имеет функцию, называемую «Schottky Power Rectifier». |
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Детали детали
Номер произв | SBRS81100T3G |
Описание | Schottky Power Rectifier |
Производители | ON Semiconductor |
логотип |
4 Pages
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MBRS1100T3G,
SBRS81100T3G,
MBRS190T3G,
SBRS8190T3G
Schottky Power Rectifier
Surface Mount Power Package
Schottky Power Rectifiers employ the use of the Schottky Barrier
principle in a large area metal-to-silicon power diode. State-of-the-art
geometry features epitaxial construction with oxide passivation and
metal overlay contact. Ideally suited for low voltage, high frequency
rectification, or as free wheeling and polarity protection diodes, in
surface mount applications where compact size and weight are critical
to the system. These state-of-the-art devices have the following
features:
Features
• Small Compact Surface Mountable Package with J-Bend Leads
• Rectangular Package for Automated Handling
• Highly Stable Oxide Passivated Junction
• High Blocking Voltage − 100 Volts
• 175°C Operating Junction Temperature
• Guardring for Stress Protection
• AEC−Q101 Qualified and PPAP Capable
• SBRS8 Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements
• All Packages are Pb−Free
Mechanical Characteristics
• Case: Epoxy, Molded
• Weight: 95 mg (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Shipped in 12 mm Tape and Reel, 2,500 units per reel
• Cathode Polarity Band
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SCHOTTKY BARRIER
RECTIFIER
1.0 AMPERE
90, 100 VOLTS
SMB
CASE 403A
MARKING DIAGRAM
AYWW
B1xG
G
B1 = Device Code
x = C for MBRS1100T3
9 for MBRS190T3
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
June, 2015 − Rev. 11
1
Publication Order Number:
MBRS1100T3/D
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MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
MBRS190T3
MBRS1100T3
VRRM
VRWM
VR
90
100
V
Average Rectified Forward Current
TL = 163°C
TL = 148°C
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
IF(AV)
IFSM
1.0
2.0
50
A
A
Operating Junction Temperature (Note 1)
TJ −65 to +175 °C
Voltage Rate of Change
dv/dt 10 V/ns
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance − Junction−to−Lead (TL = 25°C)
Symbol
RqJL
Value
22
Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage (Note 2) (iF = 1.0 A, TJ = 25°C)
VF 0.75
V
Maximum Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 25°C)
(Rated dc Voltage, TJ = 100°C)
IR
mA
0.5
5.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
ORDERING INFORMATION
Device
MBRS1100T3G
Marking
B1C
Package
SMB
(Pb−Free)
Shipping†
2500 / Tape & Reel
SBRS81100T3G
B1C
SMB
2500 / Tape & Reel
(Pb−Free)
MBRS190T3G
B19
SMB
2500 / Tape & Reel
(Pb−Free)
SBRS8190T3G
B19
SMB
2500 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
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MBRS1100T3G, SBRS81100T3G, MBRS190T3G, SBRS8190T3G
TYPICAL ELECTRICAL CHARACTERISTICS
20
10
5 TJ = 150°C
2
1 100°C
0.5
25°C
0.2
0.1
0.05
0.02
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1k
400
200
100
40
20
10
4
2
1
0.4
0.2
0.1
0.04
0.02
0.01
0
TJ = 150°C
125°C
100°C
25°C
10 20 30 40 50 60 70 80 90 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
*The curves shown are typical for the highest voltage device in the voltage
grouping. Typical reverse current for lower voltage selections can be estimated
from these curves if VR is sufficient below rated VR.
3.2 2.0
2.8
TJ = 100°C
2.4
DC
1.5
2.0
SQUARE
1.6 WAVE
1.2 DC
1.0 SQUARE
WAVE
0.8 0.5
0.4
00
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 145 150 155 160 165 170 175 180
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
TL, LEAD TEMPERATURE (°C)
Figure 3. Power Dissipation
Figure 4. Current Derating, Lead
280
260
240
220
200
180
160
140
120
100
80
60
40
20
0
0.1
0.2
NOTE: TYPICAL CAPACITANCE
NOTE: AT 0 V = 270 pF
0.5 1 2
5 10 20
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Typical Capacitance
50 100
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Номер в каталоге | Описание | Производители |
SBRS81100T3G | Schottky Power Rectifier | ON Semiconductor |
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