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PDF NP82N04PDG Data sheet ( Hoja de datos )
| Número de pieza | NP82N04PDG | |
| Descripción | N-CHANNEL POWER MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N04PDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N04PDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
NP82N04PDG-E1-AY
Pure Sn (Tin)
NP82N04PDG-E2-AY
PACKING
Tape
800 p/reel
PACKAGE
TO-263 (MP-25ZP)
typ. 1.5 g
FEATURES
• Super low on-state resistance
RDS(on)1 = 3.5 mΩ MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 8.0 mΩ MAX. (VGS = 4.5 V, ID = 41 A)
• Low Ciss Ciss = 6000 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±82
±328
Total Power Dissipation (TC = 25°C)
PT1 143
Total Power Dissipation (TA = 25°C) PT2 1.8
Channel Temperature
Tch 175
Storage Temperature
Tstg −55 to +175
Repetitive Avalanche Current Note2
IAR 43
Repetitive Avalanche Energy Note2
EAR 185
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.05
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18396EJ1V0DS00 (1st edition)
Date Published September 2006 NS CP(K)
Printed in Japan
2006
1 page  
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
8
ID = 41 A
7 Pulsed
6 VGS = 4.5 V
5
4
3 10 V
2
1
0
-100 -50
0
50 100 150 200
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
10
VDD = 20 V
VGS = 10 V
RG = 0 Ω
1
0.1
1
td(off)
td(on)
tr
tf
10 100
ID - Drain Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
10
VGS = 10 V
4.5 V
0V
1
0.1
Pulsed
0.01
0 0.5 1 1.5
VF(S-D) - Source to Drain Voltage - V
NP82N04PDG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
Ciss
1000
Coss
VGS = 0 V
f = 1 MHz
100
0.1
1
Crss
10 100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40 12
VDD = 32 V
30
20 V
8V
10
8
20
10
0
0
6
VGS 4
VDS 2
ID = 82 A
0
20 40 60 80 100 120
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
0.1
di/dt = 100 A/μs
VGS = 0 V
1 10
IF - Diode Forward Current - A
100
Data Sheet D18396EJ1V0DS
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NP82N04PDG.PDF ] | |
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