ZXTP4003Z PDF даташит
Спецификация ZXTP4003Z изготовлена «Diodes» и имеет функцию, называемую «100V PNP LED DRIVING TRANSISTOR». |
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Детали детали
Номер произв | ZXTP4003Z |
Описание | 100V PNP LED DRIVING TRANSISTOR |
Производители | Diodes |
логотип |
5 Pages
No Preview Available ! |
Features
• BVCEO > -100V
• Maximum continuous current IC = -1A
• hFE > 100 @ IC = -150mA, VCE = -0.2V
• Lead Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Applications
• LED TV backlight
A Product Line of
Diodes Incorporated
ZXTP4003Z
100V PNP LED DRIVING TRANSISTOR IN SOT89
Mechanical Data
• Case: SOT89
• Case material: molded Plastic. “Green” molding Compound.
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Matte Tin Finish
• Weight: 0.052 grams (Approximate)
SOT89
Top View
C
B
E
Device Symbol
E
CC
B
Top View
Pin-Out
Ordering Information (Note 3)
Product
ZXTP4003ZTA
Marking
1R7
Reel size (inches)
7
Tape width (mm)
12
Quantity per reel
1000 units
Notes:
1. No purposefully added lead.
2. “Green” devices, Halogen and Antimony Free, Diodes Inc’s “Green” Policy can be found on our website at http://www.diodes.com
3. For Packaging Details, go to our website at http://www.diodes.com.
Marking Information
1R7
1R7 = Product type Marking Code
ZXTP4003Z
Datasheet Number: DS35460 Rev. 1 - 2
1 of 5
www.diodes.com
December 2011
© Diodes Incorporated
No Preview Available ! |
A Product Line of
Diodes Incorporated
ZXTP4003Z
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current (Note 4)
Base Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Value
-100
-100
-7
-1
-3
-500
Unit
V
V
V
A
A
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
1.5
83
17.46
-55 to +150
Notes:
4. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%.
5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
Thermal Characteristics and Derating Information
Unit
W
°C/W
°C/W
°C
ZXTP4003Z
Datasheet Number: DS35460 Rev. 1 - 2
2 of 5
www.diodes.com
December 2011
© Diodes Incorporated
No Preview Available ! |
A Product Line of
Diodes Incorporated
ZXTP4003Z
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Collector-Emitter Breakdown Voltage (Note 7)
Collector Cut-off Current
Emitter Cut-off Current
Static Forward Current Transfer Ratio (Note 7)
BVCEO
ICBO
IEBO
hFE
-100
-
-
60
100
Base-Emitter Turn-On Voltage (Note 7)
Delay Time
Rise Time
Storage Time
Fall Time
Storage Time
Fall Time
VBE(on)
t(d)
t(r)
t(s)
t(f)
t(s)
t(f)
-
-
-
-
-
-
-
Notes: 7. Measured under pulsed conditions. Pulse width = 300µs. Duty cycle ≤ 2%
Typ
-170
-
-
133
112
-0.71
378
388
1348
382
75
363
Max
-
-50
-50
-
-
-0.95
-
-
-
-
-
-
Unit
V
nA
nA
-
V
ns
ns
ns
ns
ns
ns
Test Condition
IC = -10mA
VCB = -100V
VEB = -7V
IC = -85mA, VCE = -0.15V
IC = -150mA, VCE = -0.2V
IC = -150mA, VCE = -0.2V
VCC = -80V, IC = -150mA,f
-IB2 = 1.5mA, VCE(ON) = -0.2V
VCC = -80V, IC = -150mA,
-IB2 = -1.5mA, VCE(ON) = -4V
Electrical Characteristics @TA = 25°C unless otherwise specified
500 125°C
400
85°C
300 25°C
200
-55°C
100
V = -0.2V
CE
0
100µ
1m
10m
100m
-I Collector Current (A)
C
h vI
FE C
1
1.0
V = -0.2V
CE
0.8
25°C
-55°C
0.6
0.4
0.2
100µ
125°C
85°C
1m
10m
100m
-I Collector Current (A)
C
V vI
BE(on) C
1
50 f = 1MHz
40
30
20 Cobo
10
0
100m
1 10
-Voltage(V)
Capacitance v Voltage
100
ZXTP4003Z
Datasheet Number: DS35460 Rev. 1 - 2
3 of 5
www.diodes.com
December 2011
© Diodes Incorporated
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