ZXTP717MATA PDF даташит
Спецификация ZXTP717MATA изготовлена «Diodes» и имеет функцию, называемую «12V PNP LOW SATURATION SWITCHING TRANSISTOR». |
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Детали детали
Номер произв | ZXTP717MATA |
Описание | 12V PNP LOW SATURATION SWITCHING TRANSISTOR |
Производители | Diodes |
логотип |
7 Pages
No Preview Available ! |
Features and Benefits
• BVCEO > -12V
• IC = -4A Continuous Collector Current
• Low Saturation Voltage (-140mV max @ -1A)
• RSAT = 60 mΩ for a low equivalent On-Resistance
• hFE specified up to -10A for a high current gain hold up
• Low profile 0.6mm high package for thin applications
• RθJA efficient, 60% lower than SOT23
• 4mm2 footprint, 50% smaller than SOT23
• Lead-Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
DFN2020B-3
A Product Line of
Diodes Incorporated
ZXTP717MA
12V PNP LOW SATURATION SWITCHING TRANSISTOR
Mechanical Data
• Case: DFN2020B-3
• Case Material: Molded Plastic. “Green” Molding Compound.
• Terminals: Pre-Plated NiPdAu leadframe.
• Nominal Package Height: 0.6mm
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Weight: 0.01 grams (approximate)
Applications
• MOSFET Gate Driving
• DC-DC Converters
• Charging Circuits
• Power switches
• Motor Control
C
B
Top View
Bottom View
E
Device Symbol
Bottom View
Pin-Out
Ordering Information (Note 3)
Product
ZXTP717MATA
Marking
S1
Reel size (inches)
7
Notes:
1. No purposefully added lead.
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com
3. For Packaging Details, go to our website at http://www.diodes.com.
Tape width (mm)
8
Quantity per reel
3000
Marking Information
S1 S1 = Product Type Marking code
Top View
ZXTP717MA
Document Number DS31881 Rev. 5 - 2
1 of 7
www.diodes.com
January 2011
© Diodes Incorporated
No Preview Available ! |
A Product Line of
Diodes Incorporated
ZXTP717MA
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
(Note 4)
(Note 5)
Symbol
VCBO
VCEO
VEBO
ICM
IC
IB
Value
-20
-12
-7
-12
-4
-4.5
-1
Unit
V
A
Thermal Characteristics @TA = 25°C unless otherwise specified
Power Dissipation
Linear Derating Factor
Characteristic
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 4)
(Note 5)
(Note 4)
(Note 5)
(Note 6)
Symbol
PD
RθJA
RθJL
TJ, TSTG
Value
1.5
12
2.45
19.6
83
51
16.8
-55 to +150
Unit
W
mW/°C
°C/W
°C
Notes:
4. For a device surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition. The entire exposed collector pad is attached to the heatsink.
5. Same as note (4), except the device is measured at t ≤ 5 sec.
6. For a single device, thermal resistance from junction to solder-point (at the end of the drain lead).
ZXTP717MA
Document Number DS31881 Rev. 5 - 2
2 of 7
www.diodes.com
January 2011
© Diodes Incorporated
No Preview Available ! |
A Product Line of
Diodes Incorporated
ZXTP717MA
Thermal Characteristics
10 V
CE(SAT)
Limited
1 DC
1s
100ms
10ms
0.1
1ms
100us
Single Pulse, T =25°C
amb
0.01
0.1 1
10
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
2.0
10 sqcm
1.5 Single
1 oz Cu
T =25°C
amb
1.0
0.5
0.0
0
25 50 75 100 125 150
Temperature (°C)
Derating Curve
10 sqcm
80 Single
1 oz Cu
60
D=0.5
40
D=0.2
20
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10
Pulse Width (s)
100
Transient Thermal Impedance
1k
225
200
175
150
125
100 1oz copper
75
50
25 2oz copper
0
0.1 1
10
Board Cu Area (sqcm)
Thermal Resistance v Board Area
100
3.5
3.0
T =25°C
amb
T =150°C
j max
2.5 Continuous
2.0
2oz copper
1.5
1oz copper
1.0
0.5
0.0
0.1
1 10
Board Cu Area (sqcm)
Power Dissipation v Board Area
100
ZXTP717MA
Document Number DS31881 Rev. 5 - 2
3 of 7
www.diodes.com
January 2011
© Diodes Incorporated
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ZXTP717MATA | 12V PNP LOW SATURATION SWITCHING TRANSISTOR | Diodes |
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