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ZXTPS717MC PDF даташит

Спецификация ZXTPS717MC изготовлена ​​​​«Diodes» и имеет функцию, называемую «12V PNP LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION».

Детали детали

Номер произв ZXTPS717MC
Описание 12V PNP LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION
Производители Diodes
логотип Diodes логотип 

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ZXTPS717MC Даташит, Описание, Даташиты
Features and Benefits
PNP Transistor
BVCEO > -12V
IC = -4A Continuous Collector Current
Low Saturation Voltage (-140mV max @ -1A)
RSAT = 65mfor a low equivalent On-Resistance
hFE characterized up to -10A for high current gain hold up
Schottky Diode
BVR > 40V
IFAV = 3A Average Peak Forward Current
Low VF < 500mV (@1A) for reduced power loss
Fast switching due to Schottky barrier
Low profile 0.8mm high package for thin applications
RθJA efficient, 40% lower than SOT26
6mm2 footprint, 50% smaller than TSOP6 and SOT26
Lead-Free, RoHS Compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
A Product Line of
Diodes Incorporated
ZXTPS717MC
12V PNP LOW SATURATION TRANSISTOR AND
40V, 1A SCHOTTKY DIODE COMBINATION
Mechanical Data
Case: DFN3020B-8
Case Material: Molded Plastic, “Green” Molding Component
Terminals: Pre-Plated NiPdAu leadframe
Nominal package height: 0.8mm
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Weight: 0.013 grams (approximate)
Applications
DC – DC Converters
Charging circuits
Mobile phones
Motor control
Portable applications
DFN3020B-8
Top View
Bottom View
C1 K2
K2 K2 C1 C1
B1 K2 C1
E1 A2
PNP Transistor Schottky Diode
Equivalent Circuit
A2 n/c E1 B1 Pin 1
Bottom View
Pin-Out
n/c = Not Connected internally
Ordering Information (Note 3)
Product
ZXTPS717MCTA
Marking
1S1
Reel size (inches)
7
Notes:
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website http://www.diodes.com
3. For packaging details, go to our website http://www.diodes.com
Tape width (mm)
8
Quantity per reel
3000
Marking Information
1S1
1S1 = Product type marking code
Top view, dot denotes pin 1
ZXTPS717MC
Document Number DS31936 Rev. 3 - 2
1 of 10
www.diodes.com
April 2011
© Diodes Incorporated









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ZXTPS717MC Даташит, Описание, Даташиты
A Product Line of
Diodes Incorporated
ZXTPS717MC
PNP - Maximum Ratings @ TA = 25°C unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Parameter
Continuous Collector Current
Base Current
(Notes 4 and 7)
(Notes 5 and 7)
Symbol
VCBO
VCEO
VEBO
ICM
IC
IB
Limit
-20
-12
-7
-12
-4
-4.4
-1
Unit
V
A
PNP - Thermal Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
(Notes 4 & 7)
(Notes 5 & 7)
(Notes 6 & 7)
(Notes 6 & 8)
(Notes 4 & 7)
(Notes 5 & 7)
(Notes 6 & 7)
(Notes 6 & 8)
Symbol
PD
RθJA
Value
1.5
12
2.45
19.6
1.13
8
1.7
13.6
83.3
51.0
111
73.5
Unit
W
mW/°C
°C/W
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 9)
RθJL
TJ, TSTG
17.1
-55 to +150
°C
Notes:
4. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device
is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector and cathode pads connected to each half.
5. Same as note (4), except the device is measured at t <5 sec.
6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
ZXTPS717MC
Document Number DS31936 Rev. 3 - 2
2 of 10
www.diodes.com
April 2011
© Diodes Incorporated









No Preview Available !

ZXTPS717MC Даташит, Описание, Даташиты
PNP - Thermal Characteristics
A Product Line of
Diodes Incorporated
ZXTPS717MC
10 V
CE(SAT)
Limited
1
0.1
0.01
DC
1s
100ms
10ms
8sqcm 2oz Cu
One active die
1ms
100us
Single Pulse, T =25°C
amb
0.1 1 10
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
2.0
10sqcm 1oz Cu
Two active die
1.5
8sqcm 2oz Cu
One active die
1.0 10sqcm 1oz Cu
One active die
0.5
0.0
0
25 50 75 100 125 150
Temperature (°C)
Derating Curve
80 8sqcm 2oz Cu
One active die
60
D=0.5
40
D=0.2
20
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10
Pulse Width (s)
100
Transient Thermal Impedance
1k
225
200 1oz Cu
175 One active die
1oz Cu
150 Two active die
125
100
75
50
25
0
0.1
2oz Cu
One active die
2oz Cu
Two active die
1 10
Board Cu Area (sqcm)
100
Thermal Resistance v Board Area
3.5
T =25°C
amb
3.0 T =150°C
j max
2.5 Continuous
2oz Cu
Two active die
2.0 2oz Cu
One active die
1.5
1.0
0.5
0.0
0.1
1oz Cu
1oz Cu
Two active die
One active die
1 10
Board Cu Area (sqcm)
100
Power Dissipation v Board Area
ZXTPS717MC
Document Number DS31936 Rev. 3 - 2
3 of 10
www.diodes.com
April 2011
© Diodes Incorporated










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