ZXTPS717MC PDF даташит
Спецификация ZXTPS717MC изготовлена «Diodes» и имеет функцию, называемую «12V PNP LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION». |
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Детали детали
Номер произв | ZXTPS717MC |
Описание | 12V PNP LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION |
Производители | Diodes |
логотип |
10 Pages
No Preview Available ! |
Features and Benefits
PNP Transistor
• BVCEO > -12V
• IC = -4A Continuous Collector Current
• Low Saturation Voltage (-140mV max @ -1A)
• RSAT = 65mΩ for a low equivalent On-Resistance
• hFE characterized up to -10A for high current gain hold up
Schottky Diode
• BVR > 40V
• IFAV = 3A Average Peak Forward Current
• Low VF < 500mV (@1A) for reduced power loss
• Fast switching due to Schottky barrier
• Low profile 0.8mm high package for thin applications
• RθJA efficient, 40% lower than SOT26
• 6mm2 footprint, 50% smaller than TSOP6 and SOT26
• Lead-Free, RoHS Compliant (Note 1)
• Halogen and Antimony Free. “Green” Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
A Product Line of
Diodes Incorporated
ZXTPS717MC
12V PNP LOW SATURATION TRANSISTOR AND
40V, 1A SCHOTTKY DIODE COMBINATION
Mechanical Data
• Case: DFN3020B-8
• Case Material: Molded Plastic, “Green” Molding Component
• Terminals: Pre-Plated NiPdAu leadframe
• Nominal package height: 0.8mm
• UL Flammability Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Weight: 0.013 grams (approximate)
Applications
• DC – DC Converters
• Charging circuits
• Mobile phones
• Motor control
• Portable applications
DFN3020B-8
Top View
Bottom View
C1 K2
K2 K2 C1 C1
B1 K2 C1
E1 A2
PNP Transistor Schottky Diode
Equivalent Circuit
A2 n/c E1 B1 Pin 1
Bottom View
Pin-Out
n/c = Not Connected internally
Ordering Information (Note 3)
Product
ZXTPS717MCTA
Marking
1S1
Reel size (inches)
7
Notes:
1. No purposefully added lead.
2. Diodes Inc’s “Green” Policy can be found on our website http://www.diodes.com
3. For packaging details, go to our website http://www.diodes.com
Tape width (mm)
8
Quantity per reel
3000
Marking Information
1S1
1S1 = Product type marking code
Top view, dot denotes pin 1
ZXTPS717MC
Document Number DS31936 Rev. 3 - 2
1 of 10
www.diodes.com
April 2011
© Diodes Incorporated
No Preview Available ! |
A Product Line of
Diodes Incorporated
ZXTPS717MC
PNP - Maximum Ratings @ TA = 25°C unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Parameter
Continuous Collector Current
Base Current
(Notes 4 and 7)
(Notes 5 and 7)
Symbol
VCBO
VCEO
VEBO
ICM
IC
IB
Limit
-20
-12
-7
-12
-4
-4.4
-1
Unit
V
A
PNP - Thermal Characteristics @ TA = 25°C unless otherwise specified
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
(Notes 4 & 7)
(Notes 5 & 7)
(Notes 6 & 7)
(Notes 6 & 8)
(Notes 4 & 7)
(Notes 5 & 7)
(Notes 6 & 7)
(Notes 6 & 8)
Symbol
PD
RθJA
Value
1.5
12
2.45
19.6
1.13
8
1.7
13.6
83.3
51.0
111
73.5
Unit
W
mW/°C
°C/W
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
(Note 9)
RθJL
TJ, TSTG
17.1
-55 to +150
°C
Notes:
4. For a dual device surface mounted on 28mm x 28mm (8cm2) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device
is measured when operating in a steady-state condition. The heatsink is split in half with the exposed collector and cathode pads connected to each half.
5. Same as note (4), except the device is measured at t <5 sec.
6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm2) FR4 PCB with high coverage of single sided 1oz copper.
7. For a dual device with one active die.
8. For dual device with 2 active die running at equal power.
9. Thermal resistance from junction to solder-point (on the exposed collector pad).
ZXTPS717MC
Document Number DS31936 Rev. 3 - 2
2 of 10
www.diodes.com
April 2011
© Diodes Incorporated
No Preview Available ! |
PNP - Thermal Characteristics
A Product Line of
Diodes Incorporated
ZXTPS717MC
10 V
CE(SAT)
Limited
1
0.1
0.01
DC
1s
100ms
10ms
8sqcm 2oz Cu
One active die
1ms
100us
Single Pulse, T =25°C
amb
0.1 1 10
V Collector-Emitter Voltage (V)
CE
Safe Operating Area
2.0
10sqcm 1oz Cu
Two active die
1.5
8sqcm 2oz Cu
One active die
1.0 10sqcm 1oz Cu
One active die
0.5
0.0
0
25 50 75 100 125 150
Temperature (°C)
Derating Curve
80 8sqcm 2oz Cu
One active die
60
D=0.5
40
D=0.2
20
Single Pulse
D=0.05
D=0.1
0
100µ 1m 10m 100m 1 10
Pulse Width (s)
100
Transient Thermal Impedance
1k
225
200 1oz Cu
175 One active die
1oz Cu
150 Two active die
125
100
75
50
25
0
0.1
2oz Cu
One active die
2oz Cu
Two active die
1 10
Board Cu Area (sqcm)
100
Thermal Resistance v Board Area
3.5
T =25°C
amb
3.0 T =150°C
j max
2.5 Continuous
2oz Cu
Two active die
2.0 2oz Cu
One active die
1.5
1.0
0.5
0.0
0.1
1oz Cu
1oz Cu
Two active die
One active die
1 10
Board Cu Area (sqcm)
100
Power Dissipation v Board Area
ZXTPS717MC
Document Number DS31936 Rev. 3 - 2
3 of 10
www.diodes.com
April 2011
© Diodes Incorporated
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Номер в каталоге | Описание | Производители |
ZXTPS717MC | 12V PNP LOW SATURATION TRANSISTOR AND 1A SCHOTTKY DIODE COMBINATION | Diodes |
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