|
|
PDF NP80N04NUG Data sheet ( Hoja de datos )
| Número de pieza | NP80N04NUG | |
| Descripción | N-CHANNEL POWER MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NP80N04NUG (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
|
No Preview Available !
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N04NUG, NP80N04PUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP80N04NUG and NP80N04PUG are N-channel MOS Field Effect Transistors designed for high current
switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
NP80N04NUG-S18-AY Note
NP80N04PUG-E1B-AY Note
NP80N04PUG-E2B-AY Note
Pure Sn (Tin)
Tube
50 p/tube
Tape
1000 p/reel
Note Pb-free (This product does not contain Pb in the external electrode.)
PACKAGE
TO-262 (MP-25SK) typ. 1.8 g
TO-263 (MP-25ZP) typ. 1.5 g
FEATURES
• Non logic level
• Super low on-state resistance
- NP80N04NUG
RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A)
- NP80N04PUG
RDS(on) = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A)
• High current rating
ID(DC) = ±80 A
• Low input capacitance
Ciss = 4900 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19799EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009
1 page  
NP80N04NUG, NP80N04PUG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
350
VGS = 10 V
Pulsed
300
250
200
150
100
50
NP80N04NUG
0
0 0.5 1 1.5 2
VDS - Drain to Source Voltage - V
FORWARD TRANSFER CHARACTERISTICS
1000
100
Tch = −55°C
10 −25°C
25°C
1 75°C
125°C
0.1 150°C
175°C
0.01
0.001
0.0001
0
VDS = 10 V
Pulsed
12345
VGS - Gate to Source Voltage - V
6
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = −55°C
−25°C
25°C
75°C
125°C
10
150°C
175°C
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
350
VGS = 10 V
Pulsed
300
250
200
150
100
50
NP80N04PUG
0
0 0.5 1 1.5 2
VDS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
5
4
3
2
1
0
-75
VDS = VGS
ID = 250 μA
-25 25 75 125 175
Tch - Channel Temperature - °C
225
1
0.1
VDS = 5 V
Pulsed
1 10
ID - Drain Current - A
100
Data Sheet D19799EJ1V0DS
5
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet NP80N04NUG.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NP80N04NUG | N-CHANNEL POWER MOS FET | Renesas |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |