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NP80N04PUG PDF даташит

Спецификация NP80N04PUG изготовлена ​​​​«Renesas» и имеет функцию, называемую «N-CHANNEL POWER MOS FET».

Детали детали

Номер произв NP80N04PUG
Описание N-CHANNEL POWER MOS FET
Производители Renesas
логотип Renesas логотип 

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NP80N04PUG Даташит, Описание, Даташиты
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N04NUG, NP80N04PUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP80N04NUG and NP80N04PUG are N-channel MOS Field Effect Transistors designed for high current
switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
NP80N04NUG-S18-AY Note
NP80N04PUG-E1B-AY Note
NP80N04PUG-E2B-AY Note
Pure Sn (Tin)
Tube
50 p/tube
Tape
1000 p/reel
Note Pb-free (This product does not contain Pb in the external electrode.)
PACKAGE
TO-262 (MP-25SK) typ. 1.8 g
TO-263 (MP-25ZP) typ. 1.5 g
FEATURES
Non logic level
Super low on-state resistance
- NP80N04NUG
RDS(on) = 4.8 mΩ MAX. (VGS = 10 V, ID = 40 A)
- NP80N04PUG
RDS(on) = 4.5 mΩ MAX. (VGS = 10 V, ID = 40 A)
High current rating
ID(DC) = ±80 A
Low input capacitance
Ciss = 4900 pF TYP.
Designed for automotive application and AEC-Q101 qualified
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19799EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009









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NP80N04PUG Даташит, Описание, Даташиты
NP80N04NUG, NP80N04PUG
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Repetitive Avalanche Current Note2
Repetitive Avalanche Energy Note2
Tstg
IAR
EAR
40
±20
±80
±300
115
1.8
175
55 to +175
37
137
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. PW 10 μs, Duty Cycle 1%
2. Tch 150°C, RG = 25 Ω
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.30
83.3
°C/W
°C/W
2 Data Sheet D19799EJ1V0DS









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NP80N04PUG Даташит, Описание, Даташиты
NP80N04NUG, NP80N04PUG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 40 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate to Source Threshold Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(th)
| yfs |
RDS(on)
VDS = VGS, ID = 250 μA
VDS = 5 V, ID = 35 A
VGS = 10 V,
NP80N04NUG
ID = 40 A
NP80N04PUG
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage Note
Reverse Recovery Time
Reverse Recovery Charge
Note Pulsed test
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD = 20 V, ID = 40 A,
VGS = 10 V,
RG = 0 Ω
VDD = 32 V,
VGS = 10 V,
ID = 80 A
IF = 80 A, VGS = 0 V
IF = 80 A, VGS = 0 V,
di/dt = 100 A/μs
MIN.
2.0
25
TYP.
50
3.6
3.2
4900
480
310
32
23
65
11
90
21
31
0.92
40
44
MAX.
1
±100
4.0
4.8
4.5
7350
720
560
70
58
130
28
135
1.5
UNIT
μA
nA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25 Ω
PG.
VGS = 20 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
Data Sheet D19799EJ1V0DS
3










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