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PDF NP80N055MDG Data sheet ( Hoja de datos )
| Número de pieza | NP80N055MDG | |
| Descripción | N-CHANNEL POWER MOS FET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N055MDG, NP80N055NDG, NP80N055PDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed
for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP80N055MDG-S18-AY Note
NP80N055NDG-S18-AY Note
NP80N055PDG-E1B-AY Note
NP80N055PDG-E2B-AY Note
LEAD PLATING
Pure Sn (Tin)
PACKING
Tube
50 p/tube
Tape
1000 p/reel
Note Pb-free (This product does not contain Pb in the external electrode.)
PACKAGE
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
TO-263 (MP-25ZP) typ. 1.5 g
FEATURES
• Logic level
• Super low on-state resistance
- NP80N055MDG, NP80N055NDG
RDS(on)1 = 6.9 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 11.2 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
- NP80N055PDG
RDS(on)1 = 6.6 mΩ MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 10.9 mΩ MAX. (VGS = 4.5 V, ID = 35 A)
• High current rating
ID(DC) = ±80 A
• Low input capacitance
Ciss = 4600 pF TYP.
• Designed for automotive application and AEC-Q101 qualified
(TO-220)
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19796EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009
1 page  
NP80N055MDG, NP80N055NDG, NP80N055PDG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
10 V
150
VGS = 4.5 V
100
50
0
0
Pulsed
NP80N055MDG, NP80N055NDG
0.5 1 1.5 2
VDS - Drain to Source Voltage - V
2.5
FORWARD TRANSFER CHARACTERISTICS
1000
100
Tch = −55°C
10 −25°C
25°C
1 75°C
125°C
0.1 150°C
0.01 175°C
0.001
0.0001
0
VDS = 10 V
Pulsed
123
VGS - Gate to Source Voltage - V
4
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Tch = −55°C
−25°C
25°C
75°C
125°C
10
150°C
175°C
1
0.1
VDS = 5 V
Pulsed
1 10
ID - Drain Current - A
100
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
200
10 V
150
VGS = 4.5 V
100
50
0
0
Pulsed
NP80N055PDG
0.5 1 1.5 2
VDS - Drain to Source Voltage - V
2.5
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3
2
1
0
-75
VDS = VGS
ID = 250 μA
-25 25 75 125 175
Tch - Channel Temperature - °C
225
Data Sheet D19796EJ1V0DS
5
5 Page | ||
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