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NRVB1240MFST1G PDF даташит

Спецификация NRVB1240MFST1G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «SWITCHMODE Power Rectifiers».

Детали детали

Номер произв NRVB1240MFST1G
Описание SWITCHMODE Power Rectifiers
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NRVB1240MFST1G Даташит, Описание, Даташиты
MBR1240MFS,
NRVB1240MFS
SWITCHMODE
Power Rectifiers
Features
Low Power Loss / High Efficiency
New Package Provides Capability of Inspection and Probe After
Board Mounting
Guardring for Stress Protection
Low Forward Voltage Drop
150°C Operating Junction Temperature
Wettable Flacks Option Available
NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free Devices
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 140°C)
Peak Repetitive Forward Current,
(Rated VR, Square Wave,
20 kHz, TC = 138°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, Single
Phase, 60 Hz)
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching
Energy (10 mH Inductor,
Non−repetitive)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
40
12
20
150
V
A
A
A
Tstg −65 to +175 °C
TJ −55 to +150 °C
EAS 150 mJ
ESD Rating (Human Body Model)
3B
ESD Rating (Machine Model)
M4
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
NOTE: The heat generated must be less than the thermal conductivity from
Junction−to−Ambient: dPD/dTJ < 1/RJA.
http://onsemi.com
SCHOTTKY BARRIER
RECTIFIERS
12 AMPERES
40 VOLTS
1,2,3
5,6
MARKING
DIAGRAM
A
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
A
A
Not Used
B1240
AYWZZ
B1240
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
C
C
ORDERING INFORMATION
Device
MBR1240MFST1G
MBR1240MFST3G
NRVB1240MFST1G
NRVB1240MFST3G
Package Shipping
SO−8 FL
1500 /
(Pb−Free) Tape & Reel
SO−8 FL
(Pb−Free)
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
1500 /
Tape & Reel
SO−8 FL
5000 /
(Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
October, 2013 − Rev. 0
1
Publication Order Number:
MBR1240MFS/D









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NRVB1240MFST1G Даташит, Описание, Даташиты
MBR1240MFS, NRVB1240MFS
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 12 A, TJ = 125°C)
(iF = 12 A, TJ = 25°C)
Instantaneous Reverse Current (Note 1)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
Symbol
RθJC
Typ
vF
0.455
0.53
iR
35
0.08
Max Unit
1.7 °C/W
V
0.62
0.68
mA
170
0.5
http://onsemi.com
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NRVB1240MFST1G Даташит, Описание, Даташиты
MBR1240MFS, NRVB1240MFS
TYPICAL CHARACTERISTICS
100 100
TA = 125°C
10
TA = 150°C
1
TA = 25°C
10 TA = 125°C
TA = 150°C
1
TA = 25°C
0.1
0
0.1 0.2
TA = −40°C
0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
0.1
0
TA = −40°C
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
1.E−07
1.E−08
1.E−09
1.E−10
0
TA = 150°C
TA = 125°C
TA = 25°C
TA = −40°C
10 20 30
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
1.E+00
1.E−01
TA = 150°C
1.E−02
1.E−03
TA = 125°C
1.E−04
1.E−05
1.E−06
TA = 25°C
TA = −40°C
1.E−07
1.E−08
40 0 10 20 30 40
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Characteristics
10000
1000
TA = 25°C
100
10
0
10 20 30
VR, REVERSE VOLTAGE (V)
40
Figure 5. Typical Junction Characteristics
24
21 RqJC = 1.7°C/W
dc
18
15
SQUARE WAVE
12
0
9
6
3
0
0 20 40 60 80 100 120 140 160
TC, CASE TEMPERATURE (°C)
Figure 6. Current Derating TO−220AB
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NRVB1240MFST1GSWITCHMODE Power RectifiersON Semiconductor
ON Semiconductor

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