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NRVTS10110EMFST3G PDF даташит

Спецификация NRVTS10110EMFST3G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Very Low Leakage Trench-based Schottky Rectifier».

Детали детали

Номер произв NRVTS10110EMFST3G
Описание Very Low Leakage Trench-based Schottky Rectifier
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NRVTS10110EMFST3G Даташит, Описание, Даташиты
NTS10100EMFS,
NRVTS10100EMFS
Very Low Leakage
Trench-based Schottky
Rectifier
Features
Fine Lithography Trenchbased Schottky Technology for Very Low
Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These are PbFree and HalideFree Devices
Typical Applications
Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
High Frequency and DCDC Converters
Freewheeling and ORing diodes
Reverse Battery Protection
LED Lighting
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 940 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
http://onsemi.com
TRENCH SCHOTTKY
RECTIFIERS
10 AMPERES
100 VOLTS
1,2,3
5,6
MARKING
DIAGRAM
1
SO8 FLAT LEAD
CASE 488AA
STYLE 2
A
A
A
Not Used
TE1010
AYWWZZ
TE1010
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
C
C
ORDERING INFORMATION
Device
Package Shipping
NTS10100EMFST1G
SO8 FL
1500 /
NRVTS10100EMFST1G (PbFree) Tape & Reel
NTS10100EMFST3G
SO8 FL
5000 /
NRVTS10110EMFST3G (PbFree) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
April, 2014 Rev. 1
1
Publication Order Number:
NTS10100EMFS/D









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NRVTS10110EMFST3G Даташит, Описание, Даташиты
NTS10100EMFS, NRVTS10100EMFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 165°C)
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 163°C)
NonRepetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
100
10
20
200
V
A
A
A
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching Energy (10 mH Inductor, Nonrepetitive)
ESD Rating (Human Body Model)
Tstg 65 to +175 °C
TJ
55 to +175
°C
EAS 100 mJ
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, JunctiontoCase, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
ELECTRICAL CHARACTERISTICS
Instantaneous Forward Voltage (Note 1)
(iF = 5 A, TJ = 25°C)
(iF = 10 A, TJ = 25°C)
Symbol
RθJC
Typ
2.0
Max Unit
°C/W
vF
0.540
V
0.650
0.720
(iF = 5 A, TJ = 125°C)
(iF = 10 A, TJ = 125°C)
Instantaneous Reverse Current (Note 1)
(VR = 70 V, TJ = 25°C)
(Rated dc Voltage, TJ = 25°C)
0.500
0.570
0.610
iR
1.4 mA
5.0 50 mA
(VR = 70 V, TJ = 125°C)
(Rated dc Voltage, TJ = 125°C)
1.6 mA
3.8 15 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
http://onsemi.com
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NRVTS10110EMFST3G Даташит, Описание, Даташиты
100.0
10.0
NTS10100EMFS, NRVTS10100EMFS
TA = 125°C
TA = 150°C
TA = 175°C
TYPICAL CHARACTERISTICS
100.0
TA = 125°C
TA = 150°C
10.0
TA = 175°C
1.0
TA = 25°C
1.0
TA = 25°C
TA = 55°C
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
TA = 55°C
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E01
1.E02
1.E03
TA = 150°C
TA = 175°C
TA = 125°C
1.E+00
1.E01
1.E02
1.E03
TA = 150°C
TA = 175°C
TA = 125°C
1.E04
1.E04
1.E05
1.E06
TA = 25°C
1.E05
1.E06
TA = 25°C
1.E07
0 10 20 30 40 50 60 70 80 90
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
1.E07
100 0 10 20 30 40 50 60 70 80 90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 4. Maximum Reverse Characteristics
10,000
1,000
TJ = 25°C
25
20
DC
15
Square Wave
10
RqJC = 2.0°C/W
5
100
0.1
1 10
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
100
0
80 90 100 110 120 130 140 150 160 170
TC, CASE TEMPERATURE (°C)
Figure 6. Current Derating
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NRVTS10110EMFST3GVery Low Leakage Trench-based Schottky RectifierON Semiconductor
ON Semiconductor

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