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NRVTS12100EMFST3G PDF даташит

Спецификация NRVTS12100EMFST3G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Very Low Leakage Trench-based Schottky Rectifier».

Детали детали

Номер произв NRVTS12100EMFST3G
Описание Very Low Leakage Trench-based Schottky Rectifier
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NRVTS12100EMFST3G Даташит, Описание, Даташиты
NTS12100EMFS,
NRVTS12100EMFS
Very Low Leakage
Trench-based Schottky
Rectifier
Features
Fine Lithography Trench−based Schottky Technology for Very Low
Forward Voltage and Low Leakage
Fast Switching with Exceptional Temperature Stability
Low Power Loss and Lower Operating Temperature
Higher Efficiency for Achieving Regulatory Compliance
Low Thermal Resistance
High Surge Capability
NRV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These are Pb−Free and Halide−Free Devices
Typical Applications
Switching Power Supplies including Notebook / Netbook Adapters,
ATX and Flat Panel Display
High Frequency and DC−DC Converters
Freewheeling and OR−ing diodes
Reverse Battery Protection
LED Lighting
Instrumentation
Mechanical Characteristics:
Case: Epoxy, Molded
Epoxy Meets Flammability Rating UL 94−0 @ 0.125 in.
Lead Finish: 100% Matte Sn (Tin)
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Device Meets MSL 1 Requirements
http://onsemi.com
TRENCH SCHOTTKY
RECTIFIERS
12 AMPERES
100 VOLTS
1,2,3
5,6
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 2
MARKING
DIAGRAM
A
A TE1210
A AYWWZZ
Not Used
C
C
TE1210
A
Y
W
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
Device
Package Shipping
NTS12100EMFST1G, SO−8 FL
1500 /
NRVTS12100EMFST1G (Pb−Free) Tape & Reel
NTS12100EMFST3G, SO−8 FL
5000 /
NRVTS12100EMFST3G (Pb−Free) Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 2
1
Publication Order Number:
NTS12100EMFS/D









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NRVTS12100EMFST3G Даташит, Описание, Даташиты
NTS12100EMFS, NRVTS12100EMFS
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
(Rated VR, TC = 163°C)
Peak Repetitive Forward Current,
(Rated VR, Square Wave, 20 kHz, TC = 160°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
VRRM
VRWM
VR
IF(AV)
IFRM
IFSM
100
12
24
200
V
A
A
A
Storage Temperature Range
Operating Junction Temperature
Unclamped Inductive Switching Energy (10 mH Inductor, Non−repetitive)
ESD Rating (Human Body Model)
Tstg −65 to +175 °C
TJ
−55 to +175
°C
EAS 100 mJ
3B
ESD Rating (Machine Model)
M4
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case, Steady State
(Assumes 600 mm2 1 oz. copper bond pad, on a FR4 board)
Symbol
RθJC
Typ
2.0
Max Unit
°C/W
ELECTRICAL CHARACTERISTICS
Characteristic
Instantaneous Forward Voltage (Note 1)
(iF = 5 A, TJ = 25°C)
(iF = 12 A, TJ = 25°C)
Symbol
vF
Typ
0.52
0.65
Max Unit
V
0.73
(iF = 5 A, TJ = 125°C)
(iF = 12 A, TJ = 125°C)
Instantaneous Reverse Current (Note 1)
(VR = 70 V, TJ = 25°C)
(Rated dc Voltage, TJ = 25°C)
0.46 −
0.57 0.64
iR
1.3 − mA
5.0 55 mA
(VR = 70 V, TJ = 125°C)
(Rated dc Voltage, TJ = 125°C)
1.8 − mA
4.3 15 mA
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
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NRVTS12100EMFST3G Даташит, Описание, Даташиты
NTS12100EMFS, NRVTS12100EMFS
TYPICAL CHARACTERISTICS
100 100
10
TA = 125°C
TA = 150°C
1
TA = 25°C
TA = −55°C
10
TA = 125°C
1
TA = 150°C
TA = 25°C
TA = −55°C
0.1
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Instantaneous Forward
Characteristics
0.10.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Instantaneous Forward
Characteristics
1.E+00
1.E+00
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
TA = 175°C
TA = 150°C
TA = 125°C
TA = 25°C
1.E−01
1.E−02
1.E−03
1.E−04
1.E−05
1.E−06
TA = 175°C
TA = 150°C
TA = 125°C
TA = 25°C
1.E−06
1.E−07
0 10 20 30 40 50 60 70 80 90 100
0 10 20 30 40 50 60 70 80 90 100
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
VR, INSTANTANEOUS REVERSE VOLTAGE (V)
Figure 3. Typical Reverse Characteristics
Figure 4. Maximum Reverse Characteristics
10k 25
TJ = 25°C
RqJC = 2.0 °C/W
20 DC
15
Square Wave
1k
10
5
100
0.1
1 10
VR, REVERSE VOLTAGE (V)
Figure 5. Typical Junction Capacitance
100
0
80 90 100 110 120 130 140 150 160 170
TC, CASE TEMPERATURE (°C)
Figure 6. Current Derating TO−220AB
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NRVTS12100EMFST3GVery Low Leakage Trench-based Schottky RectifierON Semiconductor
ON Semiconductor

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