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NRVUD320W1 PDF даташит

Спецификация NRVUD320W1 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Switch-mode Power Rectifier».

Детали детали

Номер произв NRVUD320W1
Описание Switch-mode Power Rectifier
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NRVUD320W1 Даташит, Описание, Даташиты
MURD320, SURD8320,
NRVUD320W1
Switch-mode Power
Rectifier
DPAK Surface Mount Package
These state−of−the−art devices are designed for use in switching
power supplies, inverters and as free wheeling diodes.
Features
Ultrafast 35 Nanosecond Recovery Time
Low Forward Voltage Drop
Low Leakage
SURD8, NRVUD Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant*
Mechanical Characteristics
Case: Epoxy, Molded
Weight: 0.4 Gram (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
ESD Ratings:
Machine Model = C (> 400 V)
Human Body Model = 3B (> 8 kV)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
VRRM
VRWM
VR
200
V
Average Rectified Forward Current
(Rated VR, TC = 158°C)
IF(AV)
3.0
A
Peak Repetitive Forward Current
(Rated VR, Square Wave, 20 kHz,
TC = 158°C)
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load
Conditions Halfwave, 60 Hz)
IFRM
IFSM
6.0
75
A
A
Operating Junction and Storage
Temperature Range
TJ, Tstg −65 to +175
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
ULTRAFAST RECTIFIER
3.0 AMPERES, 200 VOLTS
DPAK
CASE 369C
1
4
3
STYLE 3
1
4
3
STYLE 8
MARKING DIAGRAM
AYWW
U
320G
AYWW
U
320W1G
MURD320T4G
SURD8320T4G
NRVUD320T4G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
MURD320T4G
DPAK
2500 / Tape &
(Pb−Free)
Reel
SURD8320T4G
DPAK
2500 / Tape &
(Pb−Free)
Reel
NRVUD320W1T4G DPAK
2500 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. 9
1
Publication Order Number:
MURD320/D









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NRVUD320W1 Даташит, Описание, Даташиты
MURD320, SURD8320, NRVUD320W1
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance − Junction−to−Case
Thermal Resistance − Junction−to−Ambient (Note 1)
1. Rating applies when surface mounted on the minimum pad sizes recommended.
Symbol
RqJC
RqJA
Value
6
80
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Value
Unit
Maximum Instantaneous Forward Voltage Drop (Note 2)
(iF = 3 Amps, TJ = 25°C)
(iF = 3 Amps, TJ = 125°C)
vF Volts
0.95
0.75
Maximum Instantaneous Reverse Current (Note 2)
(TJ = 25°C, Rated dc Voltage)
(TJ = 125°C, Rated dc Voltage)
iR mA
5
500
Maximum Reverse Recovery Time
(IF = 1 Amp, di/dt = 50 Amps/ms, VR = 30 V, TJ = 25°C)
(IF = 0.5 Amp, iR = 1 Amp, IREC = 0.25 A, VR = 30 V, TJ = 25°C)
trr ns
35
25
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
100 80
40 TJ = 175°C
70 20 150°C
8.0
50 4.0
2.0
0.8 100°C
30 0.4
0.2
20 0.08
0.04 25°C
0.02
10
0.008
0.004
0.002
7.0
0 20 40 60 80 100 120 140 160 180 200
5.0 VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Typical Reverse Current*
3.0
175°C
TJ = 25°C
2.0
150°C
1.0
0.7
0.5
100°C
0.3
0.2
0.1
0
0.2 0.4 0.6 0.8 1.0 1.2
vF, INSTANTANEOUS VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
1.4
* The curves shown are typical for the highest voltage device in the
voltage grouping. Typical reverse current for lower voltage selections
can be estimated from these curves if VR is sufficiently below rated
VR.
14
13
12
11
10
9.0
8.0
7.0
6.0
5.0
4.0
3.0
2.0
1.0
0
0
IPK/IAV = 20
10
SINE WAVE
SQUARE WAVE
5.0
dc
TJ = 175°C
1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Average Power Dissipation
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NRVUD320W1 Даташит, Описание, Даташиты
MURD320, SURD8320, NRVUD320W1
8.0
RATED VOLTAGE APPLIED
7.0 RqJC = 6°C/W
6.0
5.0
SINE WAVE
4.0 OR
SQUARE WAVE
3.0
2.0 TJ = 175°C
dc
1.0
0
100 110 120 130 140 150 160 170
TC, CASE TEMPERATURE (°C)
Figure 4. Current Derating, Case
180
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
RATED VOLTAGE APPLIED
RqJA = 80°C/W
SURFACE MOUNTED ON
MIN. PAD SIZE RECOMMENDED
dc
SINE WAVE
OR
SQUARE WAVE
TJ = 175°C
20 40 60 80 100 120 140 160 180 200
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Current Derating, Ambient
1000
500
300
200
TJ = 25°C
100
50
30
20
10
0 10 20 30 40 50 60 70 80 90 100
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Typical Capacitance
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Номер в каталогеОписаниеПроизводители
NRVUD320W1Switch-mode Power RectifierON Semiconductor
ON Semiconductor
NRVUD320W1T4GSwitch-mode Power RectifierON Semiconductor
ON Semiconductor

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