NP70N10KUF PDF даташит
Спецификация NP70N10KUF изготовлена «Renesas» и имеет функцию, называемую «N-CHANNEL POWER MOS FET». |
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Детали детали
Номер произв | NP70N10KUF |
Описание | N-CHANNEL POWER MOS FET |
Производители | Renesas |
логотип |
8 Pages
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP70N10KUF
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP70N10KUF is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
NP70N10KUF-E1-AZ Note
Pure Sn (Tin)
NP70N10KUF-E2-AZ Note
Note See “TAPE INFORMATION”
PACKING
Tape
800 p/reel
PACKAGE
TO-263 (MP-25ZK)
typ. 1.5 g
(TO-263)
FEATURES
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on) = 20 mΩ MAX. (VGS = 10 V, ID = 35 A)
• Low Ciss: Ciss = 2500 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
100 V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20 V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±70
±135
A
A
Total Power Dissipation (TA = 25°C)
PT1 1.8 W
Total Power Dissipation (TC = 25°C)
PT2 120 W
Channel Temperature
Tch 175 °C
Storage Temperature
Single Avalanche Current Note2
Single Avalanche Energy Note2
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
Tstg −55 to +175 °C
IAS 22 A
EAS 48 mJ
2. Starting Tch = 25°C, VDD = 50 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
1.25
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18040EJ2V0DS00 (2nd edition)
Date Published June 2006 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006
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NP70N10KUF
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
BVDSS ID = 250 μA, VGS = 0 V
Zero Gate Voltage Drain Current
IDSS VDS = 100 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate to Source Threshold Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(th)
| yfs |
RDS(on)
VDS = VGS, ID = 250 μA
VDS = 10 V, ID = 20 A
VGS = 10 V, ID = 35 A
Input Capacitance
Ciss VDS = 25 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 50 V, ID = 35 A
Rise Time
tr VGS = 10 V
Turn-off Delay Time
td(off)
RG = 0 Ω
Fall Time
tf
Total Gate Charge
QG VDD = 80 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 70 A
IF = 70 A, VGS = 0 V
Reverse Recovery Time
trr IF = 70 A, VGS = 0 V
Reverse Recovery Charge
Note Pulsed
Qrr di/dt = 100 A/μs
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
MIN.
100
1.7
11
TYP.
2.5
22
17
2500
270
110
25
9
48
7
50
16
19
1.0
88
245
MAX.
10
±100
3.3
20
3750
410
200
53
23
96
18
75
1.5
UNIT
V
μA
nA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
D.U.T.
RG = 25 Ω
PG.
VGS = 20 → 0 V
50 Ω
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle ≤ 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
2 Data Sheet D18040EJ2V0DS
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NP70N10KUF
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
100
RDS(on) Limited
(at VGS = 10 V)
ID(Pulse) = 135 A
100 μs
ID(DC) = 70 A
10
DC
TC = 25°C
Single pulse
1
0.1
1
10 ms
10
1 ms
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
Rth(ch-A) = 83.3°C/W
10
1
Rth(ch-C) = 1.25°C/W
0.1
Single pulse
0.01
100 μ
1m
10 m
100 m
1
10 100 1000
PW - Pulse Width - s
Data Sheet D18040EJ2V0DS
3
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NP70N10KUF | N-CHANNEL POWER MOS FET | Renesas |
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