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CEF630N PDF даташит

Спецификация CEF630N изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEF630N
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEF630N Даташит, Описание, Даташиты
CEP630N/CEB630N
CEF630N
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP630N
CEB630N
CEF630N
VDSS
200V
200V
200V
RDS(ON)
0.36Ω
0.36Ω
0.36Ω
ID @VGS
9A 10V
9A 10V
9A d 10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
DG
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
200
±20
9
36
78
0.63
9d
36 d
33
0.27
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.6
62.5
3.7
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 3. 2008.Oct.
http://www.cet-mos.com









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CEF630N Даташит, Описание, Даташиты
CEP630N/CEB630N
CEF630N
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 160V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 5A
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
gFS
Ciss
Coss
Crss
VDS = 10V, ID = 5A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 100V, ID = 5A,
VGS = 10V, RGEN = 50
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 160V, ID = 5.9A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
IS f
Drain-Source Diode Forward Voltage b VSD VGS = 0V, IS = 9A g
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) = 5.9A .
g.Full package VSD test condition IS = 5.9A .
Min
200
2
Typ
0.30
4
930
130
25
24
15
116
25
19
3
5
Max Units
25
100
-100
V
µA
nA
nA
4V
0.36
S
pF
pF
pF
48 ns
30 ns
232 ns
50 ns
24.7 nC
nC
nC
9A
1.5 V
4
2









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CEF630N Даташит, Описание, Даташиты
CEP630N/CEB630N
CEF630N
12
10 VGS=10,9,8,7,6V
8
VGS=6V
6
4
2
VGS=4V
0
0 2 4 6 8 10 12
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
15
12.5
10
7.5
5
2.5
TJ=125C
0
0 1.5
25 C
3.0
-55 C
4.5 6.0
7.5
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
1800
1500
1200
900
600
300
0
0
Ciss
Coss
Crss
5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3.0 ID=5A
2.5 VGS=10V
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.7 1.0 1.3 1.6 1.9
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3










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Номер в каталогеОписаниеПроизводители
CEF630NN-Channel Enhancement Mode Field Effect TransistorCET
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