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CEP14G04 PDF даташит

Спецификация CEP14G04 изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEP14G04
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEP14G04 Даташит, Описание, Даташиты
CEP14G04/CEB14G04
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
40V, 140A, RDS(ON) = 3.6m@VGS = 10V.
RDS(ON) = 6.5m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy e
Single Pulsed Avalanche Current e
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
VDS 40
VGS ±20
ID 140
97
IDM 560
100
PD 0.8
EAS 320
IAS
TJ,Tstg
80
-55 to 175
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Details are subject to change without notice .
Symbol
RθJC
RθJA
1
Limit
1.5
50
Units
C/W
C/W
Rev 1. 2010.Dec
http://www.cet-mos.com









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CEP14G04 Даташит, Описание, Даташиты
CEP14G04/CEB14G04
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics c
Symbol
Test Condition
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 40V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics d
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 50A
VGS = 4.5V, ID = 40A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Ciss
Coss
Crss
VDS = 20V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 20V, ID = 20A,
VGS = 10V, RGEN = 1.6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 20V, ID = 20A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
VSD
VGS = 0V, IS = 70A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
e.L = 0.1mH, IAS = 80A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C
Min
40
1
Typ
3
5
3730
570
360
21
12
83
19
50
10
24
Max Units
1
100
-100
V
µA
nA
nA
3V
3.6 m
6.5 m
pF
pF
pF
42 ns
24 ns
166 ns
38 ns
65 nC
nC
nC
70 A
1.3 V
2









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CEP14G04 Даташит, Описание, Даташиты
CEP14G04/CEB14G04
60
50 VGS=10,9,8,4V
40
30
20
VGS=3V
10
0
0 0.5
1 1.5
2 2.5 3
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
240
25 C
180
120
60 TJ=125 C
-55 C
0
0 2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
4800
4000
3200
Ciss
2400
1600
800 Coss
0 Crss
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
1.8 ID=50A
1.5 VGS=10V
1.2
0.9
0.6
0.3
0.1
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3










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Номер в каталогеОписаниеПроизводители
CEP14G04N-Channel Enhancement Mode Field Effect TransistorCET
CET

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