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W7NA90 Datasheet Download - STMicroelectronics

Номер произв W7NA90
Описание STW7NA90
Производители STMicroelectronics
логотип STMicroelectronics логотип 

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W7NA90 Даташит, Описание, Даташиты
STW7NA90
® STH7NA90FI
N - CHANNEL 900V - 1.05- 7A - TO-247/ISOWATT218
FAST POWER MOSFET
TYPE
STW 7NA90
S TH7NA 90F I
V DSS
900 V
900 V
RDS(on)
< 1.3
< 1.3
ID
7A
4.7 A
s TYPICAL RDS(on) = 1.05
s ± 30V GATE TO SOURCE VOLTAGE RATING
s 100% AVALANCHE TESTED
s REPETITIVE AVALANCHE DATA AT 100oC
s LOW INTRINSIC CAPACITANCE
s GATE CHARGE MINIMIZED
s REDUCED VOLTAGE SPREAD
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SWITCH MODE POWER SUPPLY (SMPS)
s CONSUMER AND INDUSTRIAL LIGHTING
s DC-AC CONVERTER FOR WELDING
EQUIPMENT AND UNINTERRUPTABLE
POWER SUPPLY (UPS)
23
1
TO-247
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V DS
V DGR
VGS
ID
ID
IDM ()
Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 k)
G ate-source Voltage
Drain Current (continuous) at Tc = 25 oC
Drain Current (continuous) at Tc = 100 oC
Drain Current (pulsed)
T otal Dissipat ion at Tc = 25 oC
Derating Factor
VISO
Ts tg
Insulation W ithstand Voltage (DC)
Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
October 1998
Va l u e
ST W7NA90 STH7NA90F I
900
900
± 30
7 4.7
43
30 30
190 70
1.52
0.56
− −− −− −
4000
-65 to 150
150
Un it
V
V
V
A
A
A
W
W /o C
V
oC
oC
1/9







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W7NA90 Даташит, Описание, Даташиты
STW7NA90 - STH7NA90FI
THERMAL DATA
Rthj-case
R th j -a mb
Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature F or Soldering Purpose
T O - 247
0.65
ISOWATT 218
1. 78
30
0. 1
3 00
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
IAR
EAS
P a ra met er
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max)
Single Pulse Avalanche Energy
(starting Tj = 25 oC, ID = IAR, VDD = 25 V)
Max Value
7
700
Unit
A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
OFF
Symbo l
V (BR)D SS
IDSS
IGSS
P ar am et e r
Test Conditions
Dr ain- s our c e
Breakdown Voltage
ID = 250 µA VGS = 0
Zero Gate Voltage
VDS = Max Rat ing
Drain Current (VGS = 0) VDS = Max Rat ing
Tc = 100oC
Gate-body Leakage
Current (VDS = 0)
VGS = ± 30 V
Min.
900
Typ. Max.
50
500
± 100
Unit
V
µA
µA
nA
ON ()
Symbo l
VGS(th)
RDS(on)
ID(o n)
P ar am et e r
Test Conditions
Gat e Threshold Voltage VDS = VGS ID = 250 µA
Static Drain-source On VGS = 10 V ID = 3.5 A
Resistance
On State Drain Current VDS > ID(o n) x RDS(on )max
VGS = 10 V
Min.
2.25
Typ.
3
1.05
Max.
3.75
1.3
Unit
V
7A
DYNAMIC
Symbo l
gfs ()
Ciss
Coss
Crss
P ar am et e r
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Test Conditions
VDS > ID(o n) x RDS(on )ma x ID = 3.5 A
Min.
7
Typ.
9
Max.
Unit
S
VDS = 25 V f = 1 MHz VGS = 0
3100
310
80
4000
380
105
pF
pF
pF
2/9







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W7NA90 Даташит, Описание, Даташиты
STW7NA90 - STH7NA90FI
ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symbo l
td(on)
tr
P ar am et e r
Turn-on Time
Rise Time
Qg Total Gate Charge
Q gs Gat e-Source Charge
Qgd Gat e-Drain Charge
Test Conditions
VDD = 450 V
ID = 3.5 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 3)
VDD = 720 V ID = 7 A VGS = 10 V
Min.
Typ.
40
41
120
20
60
Max.
54
63
170
Unit
ns
ns
nC
nC
nC
SWITCHING OFF
Symbo l
tr (Voff)
tf
tc
P ar am et e r
Off-voltage Rise T ime
Fall Time
Cross-over Time
Test Conditions
VDD = 720 V
ID = 7 A
RG = 4.7
VGS = 10 V
(see test circuit, figure 5)
Min.
Typ.
50
18
73
Max.
65
23
97
Unit
ns
ns
ns
SOURCE DRAIN DIODE
Symbo l
P ar am et e r
Test Conditions
ISD
ISDM ()
Source-drain Current
Source-drain Current
( pu ls ed)
VSD () Forward On Voltage
ISD = 7 A VGS = 0
trr Reverse Recovery
Time
Qrr Reverse Recovery
Charge
ISD = 7 A
VDD = 100 V
di/dt = 100 A/µs
Tj = 150 oC
(see test circuit, figure 5)
I R RM
Reverse Recovery
Current
() Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
() Pulse width limited by safe operating area
Min.
Typ.
Max.
7
30
830
13.8
33
1.6
Unit
A
A
V
ns
µC
A
Safe Operating Area for TO-247
Safe Operating Area for ISOWATT218
3/9










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