015AZ2.0 PDF даташит
Спецификация 015AZ2.0 изготовлена «Toshiba Semiconductor» и имеет функцию, называемую «Silicon Epitaxial Planar Type Diode». |
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Детали детали
Номер произв | 015AZ2.0 |
Описание | Silicon Epitaxial Planar Type Diode |
Производители | Toshiba Semiconductor |
логотип |
6 Pages
No Preview Available ! |
015AZ2.0~015AZ12
TOSHIBA Diode Silicon Epitaxial Planar Type
015AZ2.0~015AZ12
Constant Voltage Regulation Applications
Unit: mm
l Small package
l Nominal voltage tolerance about ±2.5%
(2.0V~12V)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Power dissipation
P* 150
Junction temperature
Tj 125
Storage temperature range
Tstg -55~125
* Mounted on a glass epoxy circuit board of 20 × 20mm,
Pad dimension of 4 × 4mm.
Unit
mW
°C
°C
Electrical Characteristics
(See Page 2~3)
JEDEC
JEITA
TOSHIBA
Weight: 1.4 mg
―
―
1-1G1A
Marking
Example 1: 015AZ12-×
Example 2: 015AZ12-×
Pin Assignment (top view)
1 2001-10-30
No Preview Available ! |
015AZ2.0~015AZ12
Electrical Characteristics (Ta = 25°C)
Zener
Voltage
Dynamic
Impedance
Knee Dynamic
Impedance
Reverse
Current
Type No.
* VZ (V)
Min Max
IZ
(mA)
ZZ(Ω)
Max
015AZ2.0 **
X
Z
015AZ2.2 **
X
Z
015AZ2.4
X
Z
015AZ2.7
X
Z
015AZ3.0
X
Z
015AZ3.3
X
Z
015AZ3.6
X
Z
015AZ3.9
X
Z
X
015AZ4.3
Y
Z
X
015AZ4.7
Y
Z
X
015AZ5.1
Y
Z
X
015AZ5.6
Y
Z
X
015AZ6.2
Y
Z
X
015AZ6.8
Y
Z
* : Test time: t = 30ms
** : Product by order.
1.85
1.95
2.05
2.16
2.28
2.40
2.50
2.65
2.80
2.95
3.10
3.25
3.40
3.55
3.70
3.87
4.00
4.13
4.25
4.40
4.53
4.66
4.80
4.97
5.14
5.30
5.43
5.61
5.80
6.00
6.19
6.40
6.60
6.82
2.05
2.15
2.26
2.38
2.50
2.60
2.75
2.90
3.05
3.20
3.35
3.50
3.65
3.80
3.97
4.10
4.23
4.35
4.50
4.63
4.76
4.90
5.07
5.24
5.40
5.63
5.81
6.00
6.20
6.39
6.60
6.80
7.02
7.20
5
5
5
5
5
5
5
5
5
5
5
5
5
5
100
100
100
110
120
130
130
130
130
120
70
40
30
25
IZ
(mA)
ZZK(Ω)
Max
IZ
(mA)
IR (mA)
Max
5
1000
0.5
120
5
1000
0.5
120
5
1000
0.5
120
5
1000
0.5
120
5
1000
0.5
50
5
1000
0.5
20
5
1000
0.5
10
5
1000
0.5
10
5
1000
0.5
5
5
1000
0.5
5
5
1000
0.5
1
5 900 0.5 1
5 500 0.5 1
5 150 0.5 0.5
VR
(V)
0.5
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.5
2.5
3.0
5.0
2 2001-10-30
No Preview Available ! |
015AZ2.0~015AZ12
Electrical Characteristics (Ta = 25ºC)
Zener
Voltage
Type No.
* VZ (V)
Min Max
IZ
(mA)
X
015AZ7.5
Y
Z
X
015AZ8.2
Y
Z
X
015AZ9.1
Y
Z
X
015AZ10
Y
Z
X
015AZ11
Y
Z
X
015AZ12
Y
Z
* : Test time: t = 30ms
7.00 7.43
7.23 7.66
7.46 7.90
7.70 8.16
7.96 8.43
8.23 8.70
8.50 9.00
8.80 9.30
9.10 9.60
9.40 9.93
9.73 10.26
10.06 10.60
10.40 10.98
10.73 11.26
11.06 11.60
11.40 11.93
11.73 12.26
12.06 12.60
5
5
5
5
5
5
Dynamic
Impedance
ZZ(Ω)
Max
IZ
(mA)
23 5
20 5
18 5
15 5
15 5
15 5
Knee Dynamic
Impedance
ZZK (Ω)
Max
IZ
(mA)
120 0.5
120 0.5
120 0.5
120 0.5
120 0.5
110 0.5
Reverse
Current
IR (mA)
Max
VR
(V)
0.5 6.0
0.5 6.5
0.5 7.0
0.5 8.0
0.5 8.5
0.5 9.0
3 2001-10-30
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Номер в каталоге | Описание | Производители |
015AZ2.0 | Silicon Epitaxial Planar Type Diode | Toshiba Semiconductor |
015AZ2.2 | Silicon Epitaxial Planar Type Diode | Toshiba Semiconductor |
015AZ2.4 | Silicon Epitaxial Planar Type Diode | Toshiba Semiconductor |
015AZ2.7 | Silicon Epitaxial Planar Type Diode | Toshiba Semiconductor |
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