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PDF NPT1015B-SMBPPR Data sheet ( Hoja de datos )
| Número de pieza | NPT1015B-SMBPPR | |
| Descripción | GaN Wideband Transistor | |
| Fabricantes | MA-COM | |
| Logotipo |  |
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NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Features
GaN on Si HEMT D-Mode Transistor
Suitable for linear and saturated applications
Tunable from DC - 3.5 GHz
28 V Operation
12 dB Gain @ 2.5 GHz
54 % Drain Efficiency @ 2.5 GHz
100 % RF Tested
Standard metal ceramic package with bolt down
flange
RoHS* Compliant
Description
The NPT1015 GaN HEMT is a wideband transistor
optimized for DC - 3.5 GHz operation. This device
supports CW, pulsed, and linear operation with
output power levels to 45 W (46.5 dBm) in an
industry standard metal-ceramic package with bolt
down flange.
The NPT1015 is ideally suited for defense
communications, land mobile radio, avionics,
wireless infrastructure, ISM applications and VHF/
UHF/L/S-band radar.
Built using the SIGANTIC® process - a proprietary
GaN-on-Silicon technology.
Ordering Information
Part Number
NPT1015B
NPT1015B-SMBPPR
Package
bulk quantity
sample
Functional Schematic
Rev. V2
RFIN / VG 1
3
Flange
2 RFOUT / VD
Pin Configuration
Pin No.
Pin Name
Function
1 RFIN / VG RF Input / Gate
2
RFOUT / VD
RF Output / Drain
3
Flange1
Ground / Source
1. The Flange must be connected to RF and DC ground. This
path must also provide a low thermal resistance heat path.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EU.
1
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
1 page  
NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
Evaluation Board and Recommended Tuning Solution
2.5 GHz Narrowband Circuit
Rev. V2
VGS
C1
1.0 mF
C2
0.1 mF
C3
0.01 mF
C4
1000 pF
R1
15
RFIN
C11
2.4 pF
L1
19.4 nH
C12
2.2 pF
C13
10 pF
NPT1015
C9
10 pF
C8
1000pF
C7
0.01 mF
C6
0.1 mF
C5
1.0 mF
VDS
C10
20 pF
C14
10 pF
C15
0.6 pF
RFOUT
Description
Parts measured on evaluation board (20-mil thick
RO4350). Matching is provided using a
combination of lumped elements and transmission
lines as shown in the simplified schematic above.
Recommended tuning solution component
placement, transmission lines, and details are
shown on the next page.
Bias Sequencing
Turning the device ON
1. Set VGS to the pinch-off (VP), typically -5 V.
2. Turn on VDS to nominal voltage (28 V).
3. Increase VGS until the IDS current is reached.
4. Apply RF power to desired level.
Turning the device OFF
1. Turn the RF power off.
2. Decrease VGS down to VP.
3. Decrease VDS down to 0 V.
4. Turn off VGS.
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
5 Page 
NPT1015B
GaN Wideband Transistor 28 V, 45 W
DC - 3.5 GHz
AC360B-2 Metal Ceramic Package†
Rev. V2
All dimensions shown as inches [millimeters].
† Plating is Ni / Au.
11
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
11 Page | ||
| Páginas | Total 12 Páginas | |
| PDF Descargar | [ Datasheet NPT1015B-SMBPPR.PDF ] | |
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