C5206 PDF даташит
Спецификация C5206 изготовлена «Hitachi» и имеет функцию, называемую «Silicon NPN Triple Diffused Transistor». |
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Детали детали
Номер произв | C5206 |
Описание | Silicon NPN Triple Diffused Transistor |
Производители | Hitachi |
логотип |
6 Pages
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2SC5206
Silicon NPN Triple Diffused
Application
High power switching
Features
• High breakdown voltage
VCBO = 500 V
• Isolated package
TO-220FM
Outline
TO-220FM
123
1. Base
2. Collector
3. Emitter
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2SC5206
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
IC(peak)
PC
PC*1
Tj
Tstg
Ratings
500
400
7
5
10
1.8
25
150
–55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V(BR)CBO
voltage
500
Collector to emitter breakdown V(BR)CEO
voltage
400
Emitter to base breakdown
voltage
V(BR)EBO
7
Collector cutoff current
Collector cutoff current
DC current transfer ratio
DC current transfer ratio
Collector to emitter saturation
voltage
ICBO
ICEO
hFE
hFE
VCE(sat)
—
—
20
18
—
Base to emitter saturation
voltage
VBE(sat)
—
Turn on time
ton —
Typ
—
—
—
—
—
—
—
—
—
0.5
Storage time
tstg — 2.0
Fall time
tf — 0.6
Max
—
Unit
V
Test conditions
IC = 100 µA, IE = 0
—V
IC = 10 mA, RBE = ∞
—V
IE = 10 mA, IC = 0
100 µA
100 µA
—
—
1.0 V
VCB = 400 V, IE = 0
VCE = 350 V, RBE = 0
VCE = 5 V, IC = 2.5 A
VCE = 5 V, IC = 1 mA
IC = 2.5 A, IB = 0.5 A
1.5 V
IC = 2.5 A, IB = 0.5 A
— µsec IC = 5 A, VCC = 150 V,
IB1 = –IB2 = 1 A
— µsec IC = 5 A, VCC = 150 V,
IB1 = –IB2 = 1 A
— µsec IC = 5 A, VCC = 150 V,
IB1 = –IB2 = 1 A
2
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Maximum Collector Power
Dissipation Curve
40
30
20
10
0 50 100 150 200
Case Temperature Tc (°C)
Area of Safe Operation
10
ic (peak)
Ic (max)
1
0.1
0.01
Ta = 25 °C
1 shot pulse
0.001
1 3 10 30 100
Collector to Emitter Voltage
300 1000
V CE (V)
Collector to Emitter Voltage vs.
Base to Emitter Resistance
600
I C = 1 mA
500
400
300
100 1 k 10 k 100 k 1 M
Base to Emitter Resistance R BE (Ω)
2SC5206
3
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Номер в каталоге | Описание | Производители |
C5200 | NPN Transistor - 2SC5200 | Toshiba |
C5201 | NPN Transistor - 2SC5201 | Toshiba |
C5206 | Silicon NPN Triple Diffused Transistor | Hitachi |
C5207A | NPN Transistor - 2SC5207A | Hitachi Semiconductor |
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DataSheet26.com | 2020 | Контакты | Поиск |