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C5206 PDF даташит

Спецификация C5206 изготовлена ​​​​«Hitachi» и имеет функцию, называемую «Silicon NPN Triple Diffused Transistor».

Детали детали

Номер произв C5206
Описание Silicon NPN Triple Diffused Transistor
Производители Hitachi
логотип Hitachi логотип 

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C5206 Даташит, Описание, Даташиты
2SC5206
Silicon NPN Triple Diffused
Application
High power switching
Features
High breakdown voltage
VCBO = 500 V
Isolated package
TO-220FM
Outline
TO-220FM
123
1. Base
2. Collector
3. Emitter









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C5206 Даташит, Описание, Даташиты
2SC5206
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector peak current
Collector power dissipation
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C
Symbol
VCBO
VCEO
VEBO
IC
IC(peak)
PC
PC*1
Tj
Tstg
Ratings
500
400
7
5
10
1.8
25
150
–55 to +150
Unit
V
V
V
A
A
W
W
°C
°C
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Collector to base breakdown V(BR)CBO
voltage
500
Collector to emitter breakdown V(BR)CEO
voltage
400
Emitter to base breakdown
voltage
V(BR)EBO
7
Collector cutoff current
Collector cutoff current
DC current transfer ratio
DC current transfer ratio
Collector to emitter saturation
voltage
ICBO
ICEO
hFE
hFE
VCE(sat)
20
18
Base to emitter saturation
voltage
VBE(sat)
Turn on time
ton
Typ
0.5
Storage time
tstg — 2.0
Fall time
tf — 0.6
Max
Unit
V
Test conditions
IC = 100 µA, IE = 0
—V
IC = 10 mA, RBE =
—V
IE = 10 mA, IC = 0
100 µA
100 µA
1.0 V
VCB = 400 V, IE = 0
VCE = 350 V, RBE = 0
VCE = 5 V, IC = 2.5 A
VCE = 5 V, IC = 1 mA
IC = 2.5 A, IB = 0.5 A
1.5 V
IC = 2.5 A, IB = 0.5 A
— µsec IC = 5 A, VCC = 150 V,
IB1 = –IB2 = 1 A
— µsec IC = 5 A, VCC = 150 V,
IB1 = –IB2 = 1 A
— µsec IC = 5 A, VCC = 150 V,
IB1 = –IB2 = 1 A
2









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C5206 Даташит, Описание, Даташиты
Maximum Collector Power
Dissipation Curve
40
30
20
10
0 50 100 150 200
Case Temperature Tc (°C)
Area of Safe Operation
10
ic (peak)
Ic (max)
1
0.1
0.01
Ta = 25 °C
1 shot pulse
0.001
1 3 10 30 100
Collector to Emitter Voltage
300 1000
V CE (V)
Collector to Emitter Voltage vs.
Base to Emitter Resistance
600
I C = 1 mA
500
400
300
100 1 k 10 k 100 k 1 M
Base to Emitter Resistance R BE (Ω)
2SC5206
3










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