|
|
PDF NTD5862N Data sheet ( Hoja de datos )
| Número de pieza | NTD5862N | |
| Descripción | N-Channel Power MOSFET / Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NTD5862N (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
|
No Preview Available !
NTD5862N, NTP5862N
N-Channel Power MOSFET
60 V, 98 A, 5.7 mW
Features
• Low RDS(on)
• High Current Capability
• 100% Avalanche Tested
• These Devices are Pb−Free, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 ms)
Continuous Drain
Current (RqJC)
(Note 1)
Power Dissipation
(RqJC)
TC = 25°C
Steady TC = 100°C
State
TC = 25°C
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
VDSS
VGS
VGS
ID
PD
IDM
TJ, Tstg
60
±20
±30
98
69
115
335
−55 to
175
V
V
V
A
W
A
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (L = 0.3 mH)
IS 96 A
EAS 205 mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL 260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Junction−to−Case (Drain)
RqJC
Junction−to−Ambient − Steady State (Note 2) RqJA
1. Limited by package to 50 A continuous.
2. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [2 oz] including traces.
Value
1.3
37
Unit
°C/W
www.onsemi.com
V(BR)DSS
60 V
RDS(on) MAX
5.7 mW @ 10 V
D
ID MAX
98 A
N−Channel
G
S
4
4
4
12
3
DPAK
CASE 369C
STYLE 2
1
2
3
IPAK
CASE 369D
STYLE 2
123
TO−220
CASE 221A
STYLE 5
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
4
Drain
Drain
NTP
5862NG
2
1 Drain 3
Gate Source
AYWW
1
Gate
3
Source
1 23
Gate Drain Source
2
Drain
A = Assembly Location*
Y = Year
WW = Work Week
5862N = Device Code
G = Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information on page 5 of
this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 4
1
Publication Order Number:
NTD5862N/D
1 page  
NTD5862N, NTP5862N
TYPICAL CHARACTERISTICS
10
1 Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
t, PULSE TIME (s)
Figure 13. Thermal Response
ORDERING INFORMATION
Order Number
Package
Shipping†
NTD5862N−1G
IPAK (Straight Lead)
(Pb−Free)
75 Units / Rail
NTD5862NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTP5862NG
TO−220
(Pb−Free)
50 Units / Rail
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet NTD5862N.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NTD5862N | N-Channel Power MOSFET / Transistor | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |