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NSV1C201MZ4 PDF даташит

Спецификация NSV1C201MZ4 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «NPN Transistor».

Детали детали

Номер произв NSV1C201MZ4
Описание NPN Transistor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSV1C201MZ4 Даташит, Описание, Даташиты
NSS1C201MZ4,
NSV1C201MZ4
100 V, 2.0 A, Low VCE(sat)
NPN Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DCDC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free and are RoHS Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current Continuous
Collector Current Peak
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
ICM
100 Vdc
140 Vdc
7.0 Vdc
2.0 A
3.0 A
Characteristic
Symbol
Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
800 mW
6.5 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA (Note 1)
155
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
2.0 W
15.6 mW/°C
Thermal Resistance,
JunctiontoAmbient
RqJA (Note 2)
64
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
PDsingle
(Note 3)
710 mW
Junction and Storage
Temperature Range
TJ, Tstg
55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR4 @ 7.6 mm2, 1 oz. copper traces.
2. FR4 @ 645 mm2, 1 oz. copper traces.
3. Thermal response.
© Semiconductor Components Industries, LLC, 2013
March, 2013 Rev. 4
1
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100 VOLTS, 2.0 AMPS
NPN LOW VCE(sat) TRANSISTOR
COLLECTOR
2,4
1
BASE
3
EMITTER
MARKING
DIAGRAM
SOT223
AYW
CASE 318E
1C201G
STYLE 1
1
A
Y
W
1C201
G
= Assembly Location
= Year
= Work Week
= Specific Device Code
= PbFree Package
PIN ASSIGNMENT
4
C
BCE
1 23
Top View Pinout
ORDERING INFORMATION
Device
Package
Shipping
NSS1C201MZ4T1G SOT223
NSV1C201MZ4T1G (PbFree)
1000/
Tape & Reel
NSS1C201MZ4T3G SOT223
(PbFree)
4000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS1C201MZ4/D









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NSV1C201MZ4 Даташит, Описание, Даташиты
NSS1C201MZ4, NSV1C201MZ4
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (IC = 10 mAdc, IB = 0)
Collector Base Breakdown Voltage (IC = 0.1 mAdc, IE = 0)
Emitter Base Breakdown Voltage (IE = 0.1 mAdc, IC = 0)
Collector Cutoff Current (VCB = 140 Vdc, IE = 0)
Emitter Cutoff Current (VEB = 6.0 Vdc)
ON CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
DC Current Gain (Note 4)
(IC = 10 mA, VCE = 2.0 V)
(IC = 500 mA, VCE = 2.0 V)
(IC = 1.0 A, VCE = 2.0 V)
(IC = 2.0 A, VCE = 2.0 V)
Collector Emitter Saturation Voltage (Note 4)
(IC = 0.1 A, IB = 0.010 A)
(IC = 0.5 A, IB = 0.050 A)
(IC = 1.0 A, IB = 0.100 A)
(IC = 2.0 A, IB = 0.200 A)
Base Emitter Saturation Voltage (Note 4)
(IC = 1.0 A, IB = 0.100 A)
Base Emitter Turnon Voltage (Note 4) (IC = 1.0 A, VCE = 2.0 V)
Cutoff Frequency (IC = 100 mA, VCE = 5.0 V, f = 100 MHz)
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cibo
Cobo
Min
100
140
7.0
150
120
80
40
Typ Max Unit
Vdc
Vdc
Vdc
100 nA
50 nA
360
0.030
0.060
0.100
0.180
V
V
1.10
0.850
V
100 MHz
305 pF
22 pF
2.5
2.0
1.5
1.0
0.5
0
25
TYPICAL CHARACTERISTICS
TC
TA
50 75 100 125
T, TEMPERATURE (°C)
Figure 1. Power Derating
150
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NSV1C201MZ4 Даташит, Описание, Даташиты
NSS1C201MZ4, NSV1C201MZ4
TYPICAL CHARACTERISTICS
400
360
320
280
240
200
160
120
80
40
00.001
150°C
VCE = 2 V
25°C
55°C
0.01 0.1
1
IC, COLLECTOR CURRENT (A)
Figure 2. DC Current Gain
10
400
360
320
280
240
200
160
120
80
40
0
0.001
150°C
VCE = 4 V
25°C
55°C
0.01 0.1
1
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain
10
1
IC /IB = 10
1
IC /IB = 20
0.1
150°C
25°C
55°C
0.1
25°C
150°C
55°C
0.01
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 4. CollectorEmitter Saturation Voltage
0.01
0.001
0.01
0.1
1
10
IC, COLLECTOR CURRENT (A)
Figure 5. CollectorEmitter Saturation Voltage
1.4
1.2 IC /IB = 10
1.4
1.2 IC /IB = 50
1
150°C
0.8
0.6 25°C
0.4 55°C
0.2
1 55°C
0.8
25°C
0.6
150°C
0.4
0.2
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 6. BaseEmitter Saturation Voltage
10
0
0.001
0.01
0.1
1
IC, COLLECTOR CURRENT (A)
Figure 7. BaseEmitter Saturation Voltage
10
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NSV1C201MZ4NPN TransistorON Semiconductor
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