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SBAS20L PDF даташит

Спецификация SBAS20L изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «High Voltage Switching Diode».

Детали детали

Номер произв SBAS20L
Описание High Voltage Switching Diode
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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SBAS20L Даташит, Описание, Даташиты
BAS19L, NSVBAS19L,
BAS20L, SBAS20L, BAS21L,
SBAS21L, BAS21DW5,
SBAS21DW5
High Voltage
Switching Diode
Features
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
S and NSV Prefixes for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AECQ101 Qualified and PPAP Capable
MAXIMUM RATINGS
Rating
Symbol
Continuous Reverse Voltage
BAS19, NSVBAS19
BAS20, SBAS20
BAS21, SBAS21
VR
Repetitive Peak Reverse Voltage
BAS19, NSVBAS19
BAS20, SBAS20
BAS21, SBAS21
VRRM
Continuous Forward Current
Peak Forward Surge Current
Junction and Storage Temperature
Range
IF
IFM(surge)
TJ, Tstg
Power Dissipation (Note 1)
Electrostatic Discharge
PD
ESD
Value
120
200
250
120
200
250
200
625
55 to
+150
385
HM < 500
Unit
Vdc
Vdc
mAdc
mAdc
°C
mW
V
MM < 400
V
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on FR5 Board = 1.0 x 0.75 x 0.062 in.
http://onsemi.com
HIGH VOLTAGE
SWITCHING DIODE
SOT23
3
CATHODE
1
ANODE
SC88A
5
CATHODE
1
ANODE
4
CATHODE
3
ANODE
MARKING DIAGRAMS
33
1
2
SOT23 (TO236)
CASE 318
STYLE 8
Jx M G
G
12
54
3
1
SC88A (SOT353)
CASE 419A
Jx M G
G
12 3
x = P, R, or S
P = BAS19L, NSVBAS19L
R = BAS20L, SBAS20L
S = BAS21L, SBAS21L or
BAS21DW5, SBAS21DW5
M = Date Code
G = PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon the manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
© Semiconductor Components Industries, LLC, 2012
November, 2012 Rev. 15
1
Publication Order Number:
BAS19LT1/D









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SBAS20L Даташит, Описание, Даташиты
BAS19L, NSVBAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5,
SBAS21DW5
THERMAL CHARACTERISTICS (SOT23)
Characteristic
Total Device Dissipation FR5 Board
(Note 2)
TA = 25°C
Derate above 25°C
Thermal Resistance
JunctiontoAmbient (SOT23)
Total Device Dissipation Alumina Substrate
(Note 3)
TA = 25°C
Derate above 25°C
Thermal Resistance JunctiontoAmbient
Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS (SC88A)
Characteristic
Power Dissipation (Note 4)
Thermal Resistance
JunctiontoAmbient
Derate Above 25°C
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
2. FR5 = 1.0 0.75 0.062 in.
3. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
4. Mounted on FR5 Board = 1.0 x 0.75 x 0.062 in.
Symbol
PD
RqJA
PD
RqJA
TJ, Tstg
Max
225
1.8
556
300
2.4
417
55 to +150
Symbol
PD
RqJA
TJmax
TJ, Tstg
Max
385
328
3.0
150
55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
Unit
mW
°C/W
mW/°C
°C
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Voltage Leakage Current
(VR = 100 Vdc)
(VR = 150 Vdc)
(VR = 200 Vdc)
(VR = 100 Vdc, TJ = 150°C)
(VR = 150 Vdc, TJ = 150°C)
(VR = 200 Vdc, TJ = 150°C)
BAS19, NSVBAS19
BAS20, SBAS20
BAS21, SBAS21
BAS19
BAS20, SBAS20
BAS21, SBAS21
Reverse Breakdown Voltage
(IBR = 100 mAdc)
(IBR = 100 mAdc)
(IBR = 100 mAdc)
BAS19, NSVBAS19
BAS20, SBAS20
BAS21, SBAS21
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
Diode Capacitance (VR = 0, f = 1.0 MHz)
Reverse Recovery Time (IF = IR = 30 mAdc, IR(REC) = 3.0 mAdc, RL = 100)
Symbol
IR
V(BR)
VF
CD
trr
Min
120
200
250
Max Unit
mAdc
0.1
0.1
0.1
100
100
100
Vdc
Vdc
1.0
1.25
5.0 pF
50 ns
http://onsemi.com
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SBAS20L Даташит, Описание, Даташиты
BAS19L, NSVBAS19L, BAS20L, SBAS20L, BAS21L, SBAS21L, BAS21DW5,
SBAS21DW5
+10 V
820 W
2.0 k
100 mH
0.1 mF
IF
0.1 mF
tr tp
10%
t
IF
trr t
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
IR(REC) = 3.0 mA
IR
OUTPUT PULSE
(IF = IR = 30 mA; MEASURED
at IR(REC) = 3.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 30 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 30 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
100
150°C
125°C
85°C
10
55°C
10 150°C
125°C
1.0
85°C
25°C 0.1
55°C
1.0
-55°C
-40°C
0.01
25°C
0.1
0.2 0.3
0.4 0.5 0.6 0.7 0.8
VF, FORWARD VOLTAGE (V)
0.9 1.0
0.001
20
50
Figure 2. VF vs. IF
80 110 140 170 200
VR, REVERSE VOLTAGE (V)
Figure 3. IR vs. VR
230 260
1.6
Cap
1.4
1.2
1.0
0.8
0.6
0.4
0 1 2 3 4 56
78
VR, REVERSE VOLTAGE (V)
Figure 4. Capacitance
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
SBAS20LHigh Voltage Switching DiodeON Semiconductor
ON Semiconductor

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