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NP84N075NUE PDF даташит

Спецификация NP84N075NUE изготовлена ​​​​«Renesas» и имеет функцию, называемую «N-CHANNEL POWER MOS FET».

Детали детали

Номер произв NP84N075NUE
Описание N-CHANNEL POWER MOS FET
Производители Renesas
логотип Renesas логотип 

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NP84N075NUE Даташит, Описание, Даташиты
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP84N075EUE, NP84N075KUE
NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
These products are N-channel MOS Field Effect Transistors designed for high current switching applications.
<R> ORDERING INFORMATION
PART NUMBER
NP84N075EUE-E1-AY Note1, 2
NP84N075EUE-E2-AY Note1, 2
NP84N075KUE-E1-AY Note1
NP84N075KUE-E2-AY Note1
NP84N075CUE-S12-AZ Note1, 2
NP84N075DUE-S12-AY Note1, 2
NP84N075MUE-S18-AY Note1
NP84N075NUE-S18-AY Note1
LEAD PLATING
Pure Sn (Tin)
Sn-Ag-Cu
Pure Sn (Tin)
PACKING
Tape 800 p/reel
Tube 50 p/tube
Notes 1. Pb-free (This product does not contain Pb in the external electrode.)
2. Not for new design
PACKAGE
TO-263 (MP-25ZJ) typ. 1.4 g
TO-263 (MP-25ZK) typ. 1.5 g
TO-220 (MP-25) typ. 1.9 g
TO-262 (MP-25 Fin Cut) typ. 1.8 g
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
(TO-220)
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
RDS(on) = 12.5 mΩ MAX. (VGS = 10 V, ID = 42 A)
Low input capacitance
Ciss = 5600 pF TYP.
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D14675EJ4V0DS00 (4th edition)
Date Published October 2007 NS
2002, 2007
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.









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NP84N075NUE Даташит, Описание, Даташиты
NP84N075EUE, NP84N075KUE, NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C) Note1
Drain Current (pulse) Note2
VGSS
ID(DC)
ID(pulse)
Total Power Dissipation (TA = 25°C)
PT1
Total Power Dissipation (TC = 25°C)
PT2
Channel Temperature
Tch
Storage Temperature
Single Avalanche Current Note3
Single Avalanche Energy Note3
Tstg
IAS
EAS
75
±20
±84
±260
1.8
200
175
55 to +175
19/52/73
333/250/50
V
V
A
A
W
W
°C
°C
A
mJ
Notes 1. Calculated constant current according to MAX. allowable channel temperature.
2. PW 10 μs, Duty cycle 1%
3. Starting Tch = 25°C, VDD = 35 V, RG = 25 Ω, VGS = 20 0 V (See Figure 4.)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.75
83.3
°C/W
°C/W
2 Data Sheet D14675EJ4V0DS









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NP84N075NUE Даташит, Описание, Даташиты
NP84N075EUE, NP84N075KUE, NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 75 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±20 V, VDS = 0 V
Gate to Source Threshold Voltage
Forward Transfer Admittance
VGS(th)
| yfs |
VDS = VGS, ID = 250 μA
VDS = 10 V, ID = 42 A
Drain to Source On-state Resistance
RDS(on)
VGS = 10 V, ID = 42 A
Input Capacitance
Ciss VDS = 25 V,
Output Capacitance
Coss
VGS = 0 V,
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 38 V, ID = 42 A,
Rise Time
tr VGS = 10 V,
Turn-off Delay Time
td(off)
RG = 0 Ω
Fall Time
tf
Total Gate Charge
QG VDD = 60 V,
Gate to Source Charge
QGS VGS = 10 V,
Gate to Drain Charge
QGD ID = 84 A
Body Diode Forward Voltage
VF(S-D)
IF = 84 A, VGS = 0 V
Reverse Recovery Time
trr IF = 84 A, VGS = 0 V,
Reverse Recovery Charge
Qrr di/dt = 100 A/μs
MIN. TYP. MAX. UNIT
10 μA
±100 nA
2.0 3.0 4.0
V
21 43
S
9.3 12.5 mΩ
5600 8400 pF
530 800 pF
270 490 pF
30 66 ns
21 53 ns
72 150 ns
12 30 ns
100 150 nC
24 nC
35 nC
1.0 V
70 ns
200 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
PG.
VGS = 20 V 0 V
50 Ω
L
VDD
ID
VDD
IAS BVDSS
VDS
Starting Tch
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 μs
Duty Cycle 1%
RL VGS
VGS
Wave Form
10%
0
VGS 90%
VDD
ID 90%
ID 0 10%
Wave Form
ID
90%
10%
td(on) tr td(off) tf
ton toff
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG. 50 Ω
RL
VDD
Data Sheet D14675EJ4V0DS
3










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