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даташит IRF661TRPbF PDF ( Datasheet )

IRF661TRPbF Datasheet Download - International Rectifier

Номер произв IRF661TRPbF
Описание MOSFET
Производители International Rectifier
логотип International Rectifier логотип 



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IRF661TRPbF Даташит, Описание, Даташиты
RoHs Compliant
Lead-Free (Qualified up to 260°C Reflow)
Application Specific MOSFETs
Ideal for CPU Core DC-DC Converters
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
PD - 97215
IRF6612PbF
IRF661TRPbF
DirectFETPower MOSFET
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 2.5m@ 10V 3.4m@ 4.5V
Qg tot Qgd
Qgs2
Qrr
Qoss Vgs(th)
30nC 10nC 2.9nC 8.1nC 18nC 1.8V
Applicable DirectFET Package/Layout Pad (see p.8,9 for details)
MX
DirectFETISOMETRIC
SQ SX ST
MQ MX MT
Description
The IRF6612PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6612PbF balances industry leading on-state resistance while minimizing gate charge along with ultra low package
inductance to reduce both conduction and switching losses. The reduced losses make this product ideal for high frequency/
high efficiency DC-DC converters that power high current loads such as the latest generation of microprocessors. The
IRF6612PbF has been optimized for parameters that are critical in synchronous buck converter’s SyncFET sockets.
Absolute Maximum Ratings
Parameter
VDS Drain-to-Source Voltage
VGS
ID @ TC = 25°C
ID @ TA = 25°C
ID @ TA = 70°C
IDM
EAS
IAR
10
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Single Pulse Avalanche Energy
Avalanche Current
9 ID = 24A
8
7
6 TJ = 125°C
5
4
3
2 TJ = 25°C
1
0
2 3 4 5 6 7 8 9 10
Max.
30
±20
136
24
19
190
37
19
6.0
5.0 ID= 19A
4.0
VDS = 24V
VDS = 15V
3.0
2.0
1.0
0.0
0
10 20
Units
V
A
mJ
A
30 40
VGS, Gate -to -Source Voltage (V)
Fig 1. Typical On-Resistance vs. Gate-to-Source Voltage
Notes:
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
QG Total Gate Charge (nC)
Fig 2. Total Gate Charge vs. Gate-to-Source Voltage
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting TJ = 25°C, L = 0.20mH, RG = 25, IAS = 19A.
1
05/29/06







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IRF661TRPbF Даташит, Описание, Даташиты
IRF6612PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
VGS(th)
VGS(th)/TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
96
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Output Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Diode Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Min.
–––
–––
–––
–––
–––
Typ.
–––
24
2.5
3.4
1.8
-5.6
–––
–––
–––
–––
–––
30
8.5
2.9
10
8.6
13
18
15
52
21
4.8
3970
780
360
Typ.
–––
–––
–––
19
8.1
Max.
–––
–––
3.3
4.4
2.25
–––
1.0
100
100
-100
–––
45
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Units
V
mV/°C
m
V
mV/°C
µA
nA
S
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 24A
VGS = 4.5V, ID = 19A
VDS = VGS, ID = 250µA
VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VDS = 15V, ID = 19A
VDS = 15V
nC VGS = 4.5V
ID = 19A
See Fig. 14
nC VDS = 16V, VGS = 0V
VDD = 16V, VGS = 4.5V
ID = 19A
ns Clamped Inductive Load
See Fig. 15 & 16
VGS = 0V
pF VDS = 15V
ƒ = 1.0MHz
Max.
110
190
1.0
29
12
Units
A
V
ns
nC
Conditions
MOSFET symbol
D
showing the
integral reverse
G
p-n junction diode.
S
TJ = 25°C, IS = 19A, VGS = 0V
TJ = 25°C, IF = 19A
di/dt = 100A/µs See Fig. 17
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 400µs; duty cycle 2%.
2
www.irf.com







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IRF661TRPbF Даташит, Описание, Даташиты
IRF6612PbF
Absolute Maximum Ratings
PD @TA = 25°C
Power Dissipation
PD @TA = 70°C
Power Dissipation
PD @TC = 25°C
Power Dissipation
TP Peak Soldering Temperature
TJ Operating Junction and
TTShTGermal
Storage
Resistance
Temperature
Range
Parameter
RθJA
RθJA
RθJA
RθJC
RθJ-PCB
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Linear Derating Factor
2.8
1.8
89
270
-40 to + 150
Typ.
–––
12.5
20
–––
1.0
0.022
Max.
45
–––
–––
1.4
–––
W
°C
Units
°C/W
W/°C
100
D = 0.50
10 0.20
0.10
0.05
1 0.02
0.01
0.1
0.01
SINGLE PULSE
( THERMAL RESPONSE )
τJ τJ
τ1 τ1
R 1R 1
Ci=
C
iτ=iRi/iRi
0.001
1E-006
1E-005
0.0001
0.001
0.01
R 2R 2
τ2 τ2
R 3R 3
τ3 τ3
R 4R4
τ4 τ4
Ri (°C/W)
τAτA
1.2801
8.7256
21.750
τi (sec)
0.000322
0.164798
2.25760
13.251 69
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)
Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Rθ is measured at TJ of approximately 90°C.
Surface mounted on 1 in. square Cu
(still air).
www.irf.com
Mounted to a PCB with
small clip heatsink (still air)
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
3










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