NP88N04KUG Datasheet PDF - Renesas
| Part Number | NP88N04KUG | |
| Description | N-CHANNEL POWER MOS FET | |
| Manufacturers | Renesas | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N04KUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP88N04KUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP88N04KUG
TO-263 (MP-25ZK)
FEATURES
• Channel temperature 175 degree rating
• Super low on-state resistance
RDS(on) = 2.9 mΩ MAX. (VGS = 10 V, ID = 44 A)
• Low Ciss: Ciss = 10000 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
40
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±88
±352
Total Power Dissipation (TA = 25°C)
PT1 1.8
Total Power Dissipation (TC = 25°C)
PT2 200
Channel Temperature
Tch 175
Storage Temperature
Tstg −55 to +175
Repetitive Avalanche Current Note2
IAR 56
Repetitive Avalanche Energy Note2
EAR 314
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.75
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16855EJ1V0DS00 (1st edition)
Date Published June 2004 NS CP(K)
Printed in Japan
2004
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NP88N04KUG
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
5
4
3
2
1
0
-100
VGS = 10 V
ID = 44 A
-50 0 50 100 150
Tch - Channel Temperature - °C
1000
SWITCHING CHARACTERISTICS
100
10 tr
1
0.1
td(of f )
td( on)
tf
VDD = 20 V
V GS = 10 V
RG = 0 Ω
1 10
ID - Drain Current - A
100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
100
VGS = 10 V
10
0V
1
0.1
0.01
0
Pulsed
0.4 0.8 1.2
VF(S-D) - Source to Drain Voltage - V
1.6
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
VGS = 0 V
f = 1 MHz
10000
Ciss
1000
Coss
Crss
100
0.1
1 10
VDS - Drain to Source Voltage - V
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
50 10
VDD = 32 V
40 20 V
8V
VGS
8
30 6
20 4
10
0
0
2
VDS
ID = 88 A
0
40 80 120 160 200
QG - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
1
di/dt = 100 A/µs
VGS = 0 V
10
IF - Diode Forward Current - A
100
Data Sheet D16855EJ1V0DS
5
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| Information | Total 7 Pages | |
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