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NP88N055KUG PDF даташит

Спецификация NP88N055KUG изготовлена ​​​​«Renesas» и имеет функцию, называемую «N-CHANNEL POWER MOS FET».

Детали детали

Номер произв NP88N055KUG
Описание N-CHANNEL POWER MOS FET
Производители Renesas
логотип Renesas логотип 

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NP88N055KUG Даташит, Описание, Даташиты
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP88N055KUG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP88N055KUG is N-channel MOS Field Effect
Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP88N055KUG
TO-263 (MP-25ZK)
FEATURES
Channel temperature 175 degree rating
Super low on-state resistance
RDS(on) = 3.9 mMAX. (VGS = 10 V, ID = 44 A)
Low Ciss: Ciss = 9600 pF TYP.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
55
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) Note1
ID(DC)
ID(pulse)
±88
±352
Total Power Dissipation (TA = 25°C)
PT1 1.8
Total Power Dissipation (TC = 25°C)
PT2 200
Channel Temperature
Tch 175
Storage Temperature
Tstg 55 to +175
Repetitive Avalanche Current Note2
IAR 50
Repetitive Avalanche Energy Note2
EAR 250
Notes 1. PW 10 µs, Duty Cycle 1%
2. Tch 150°C, VDD = 28 V, RG = 25 , VGS = 20 0 V
V
V
A
A
W
W
°C
°C
A
mJ
(TO-263)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
Rth(ch-C)
Rth(ch-A)
0.75
83.3
°C/W
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D16856EJ1V0DS00 (1st edition)
Date Published August 2004 NS CP(K)
Printed in Japan
2004









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NP88N055KUG Даташит, Описание, Даташиты
NP88N055KUG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 55 V, VGS = 0 V
Gate Leakage Current
Gate to Source Threshold Voltage Note
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
IGSS
VGS(th)
| yfs |
RDS(on)
VGS = ±20 V, VDS = 0 V
VDS = VGS, ID = 250 µA
VDS = 10 V, ID = 44 A
VGS = 10 V, ID = 44 A
Input Capacitance
Ciss VDS = 25 V
Output Capacitance
Coss
VGS = 0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 28 V, ID = 44 A
Rise Time
tr VGS = 10 V
Turn-off Delay Time
td(off)
RG = 0
Fall Time
tf
Total Gate Charge
QG VDD = 44 V
Gate to Source Charge
QGS
VGS = 10 V
Gate to Drain Charge
Body Diode Forward Voltage Note
QGD
VF(S-D)
ID = 88 A
IF = 88 A, VGS = 0 V
Reverse Recovery Time
trr IF = 88 A, VGS = 0 V
Reverse Recovery Charge
Note Pulsed
Qrr di/dt = 100 A/µs
MIN. TYP. MAX. UNIT
1 µA
±100 nA
2.0 3.0 4.0
V
28 58
S
3.1 3.9 m
9600 14400 pF
730 1100 pF
380 690 pF
39 90 ns
34 90 ns
120 240 ns
15 40 ns
166 250 nC
38 nC
53 nC
0.92 1.5
V
48 ns
63 nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
RG = 25
PG.
VGS = 20 0 V
50
L
VDD
BVDSS
ID
VDD
IAS
VDS
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VDS
90%
VDS
VDS
Wave Form
0
td(on)
VGS 90%
90%
10% 10%
tr td(off) tf
ton toff
D.U.T.
IG = 2 mA
PG. 50
RL
VDD
2 Data Sheet D16856EJ1V0DS









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NP88N055KUG Даташит, Описание, Даташиты
NP88N055KUG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
120
100
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
250
200
150
100
50
0
0 25 50 75 100 125 150 175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
1000
RDS(on) Limited
(at VGS = 10 V)
ID(pulse) = 352 A
PW = 100 µs
100
ID(DC) = 88 A
1 ms
10
DC
1
TC = 25°C
Single pulse
0.1
0.1
1
10 ms
10
VDS - Drain to Source Voltage - V
100
1000
100
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
Rth(ch-A) = 83.3°C/W
10
Rth(ch-C) = 0.75°C/W
1
0.1
0.01
100 µ
1 m 10 m 100 m
1
10
PW - Pulse Width - s
Single pulse
100 1000
Data Sheet D16856EJ1V0DS
3










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