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PDF SUD50N025-09BP Data sheet ( Hoja de datos )
| Número de pieza | SUD50N025-09BP | |
| Descripción | N-Channel 25-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
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SUD50N025-09BP
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
25
rDS(on) (W)
0.0086 @ VGS = 10 V
0.012 @ VGS = 4.5 V
ID (A)a, e
62
52
Qg (Typ)
18.5 nC
TO-252
FEATURES
D TrenchFETr Power MOSFET
D 100% Rg Tested
D RoHS Compliant
APPLICATIONS
D DC/DC Conversion, High-Side
– Desktop PC
D
RoHS
COMPLIANT
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50N025-09BP—E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 175_C)
Pulsed Drain Current
Continuous Source-Drain Diode Current
Avalanche Current Pulse
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TC = 25_C
TC = 70_C
TA = 25_C
TA = 70_C
TC = 25_C
TA = 25_C
L = 0.1 mH
TC = 25_C
TC = 70_C
TA = 25_C
TA = 70_C
VDS
VGS
ID
IDM
IS
IAS
EAS
PD
TJ, Tstg
25
"20
62e
51e
26b, c
22b, c
100
37
6.7b, c
28
39.2
55
39
10b, c
7b, c
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambientb, d
Maximum Junction-to-Case
t p 10 sec
Steady State
RthJA
RthJC
Notes:
a. Based on TC = 25_C.
b. Surface mounted on 1” x 1” FR4 board.
c. t = 10 sec
d. Maximum under steady state conditions is 50 _C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.
Document Number: 73477
S–51449—Rev. A, 01-Aug-05
Typical
12
2.2
Maximum
15
2.7
Unit
_C/W
www.vishay.com
1
1 page  
New Product
SUD50N025-09BP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Current De-Rating
16
Power De-Rating
3.0
2.5
12
2.0
8 1.5
1.0
4
0.5
0
0 25 50 75 100 125 150 175
TC – Case Temperature (_C)
0.0
25
50 75 100 125 150
TC – Case Temperature (_C)
175
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
10–4
Single Pulse
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
Notes:
PDM
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 70_C/W
3. TJM – TA = PDMZthJA(t)
4. Surface Mounted
10 100 600
Document Number: 73477
S–51449—Rev. A, 01-Aug-05
www.vishay.com
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