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PDF SUD50N025-4m5P Data sheet ( Hoja de datos )
| Número de pieza | SUD50N025-4m5P | |
| Descripción | N-Channel 25-V (D-S) MOSFET | |
| Fabricantes | Vishay | |
| Logotipo |  |
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SUD50N025-4m5P
Vishay Siliconix
N-Channel 25-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
25 0.0045 at VGS = 10 V
0.0060 at VGS = 4.5 V
ID (A)a, d
50
50
Qg (Typ.)
36.25 nC
TO-252
FEATURES
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
APPLICATIONS
• DC/DC Conversion, Low-Side
- Desktop PC
- Server
D
RoHS
COMPLIANT
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50N025-4m5P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC = 25 °C
Continuous Drain Current (TJ = 175 °C)
TC = 70 °C
TA = 25 °C
ID
TA = 70 °C
Pulsed Drain Current
IDM
Avalanche Current
Repetitive Avalanche Energy
L = 0.1 mH
IAS
EAS
Continuous Source-Drain Diode Current
TC = 25 °C
TA = 25 °C
IS
TC = 25 °C
Maximum Power Dissipation
TC = 70 °C
TA = 25 °C
PD
TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit
25
± 20
50a, d
50a, d
18b, c
15b, c
100
28
39
50a, d
2.1b, c
108a
75.6a
2.5b, c
1.75b, c
- 55 to 175
Unit
V
A
V
A
W
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambientb, c
Maximum Junction-to-Case
t ≤ 10 s
Steady State
Symbol
RthJA
RthJC
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Calculated based on maximum junction temperature. Package limitation current is 50 A.
e. Maximum under Steady State conditions is 90 °C/W.
Typical
48
1.6
Maximum
60
2
Unit
°C/W
Document Number: 74951
S-81735-Rev. B, 04-Aug-08
www.vishay.com
1
1 page  
SUD50N025-4m5P
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
120 100
100
80
60
40
Package Limited
20
80
60
40
20
0
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
Current Derating*
0
0 25 50 75 100 125 150 175
TC - Case Temperature (°C)
Power Derating
* The power dissipation PD is based on TJ(max) = 175 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
2
1
Duty Cycle = 0.5
0.2
0.1
0.1 0.05
0.02
0.01
10- 5
Single Pulse
10- 4
10- 3
10- 2
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Case
10- 1
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?74951
Document Number: 74951
S-81735-Rev. B, 04-Aug-08
www.vishay.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet SUD50N025-4m5P.PDF ] | |
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