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PDF IRLU3714PbF Data sheet ( Hoja de datos )
| Número de pieza | IRLU3714PbF | |
| Descripción | SMPS MOSFET | |
| Fabricantes | International Rectifier | |
| Logotipo |  |
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SMPS MOSFET
PD - 95554A
IRLR3714PbF
IRLU3714PbF
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
HEXFET® Power MOSFET
VDSS
20V
RDS(on) max
20mΩ
ID
36A
Benefits
l Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
D-Pak
IRLR3714
I-Pak
IRLU3714
Absolute Maximum Ratings
Symbol
VDS
VGS
ID @ TC = 25°C
ID @ TC = 70°C
IDM
PD @TC = 25°C
PD @TC = 70°C
TJ , TSTG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Thermal Resistance
RθJC
RθJA
RθJA
Parameter
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Max.
20
± 20
36
31
140
47
33
0.31
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
Typ.
–––
–––
–––
Max.
3.2
50
110
Units
°C/W
Notes through
are on page 10
www.irf.com
1
1/11/05
1 page  
IRLR/U3714PbF
40
LIMITED BY PACKAGE
30
20
10
VDS
VGS
RG
RD
D.U.T.
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
+-V D D
Fig 10a. Switching Time Test Circuit
VDS
90%
0
25 50 75 100 125 150
TC , Case Temperature
( °C)
Fig 9. Maximum Drain Current Vs.
Case Temperature
175
10%
VGS
td(on) tr
td(off) tf
Fig 10b. Switching Time Waveforms
10
D = 0.50
1
0.20
0.10
0.05
0.02
0.01
0.1
0.01
0.00001
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
t1, Rectangular Pulse Duration (sec)
P DM
t1
t2
Notes:
1. Duty factor D =
t1/ t 2
2. Peak T J = P DM x Z thJC + T C
0.1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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