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IXTU4N60P PDF даташит

Спецификация IXTU4N60P изготовлена ​​​​«IXYS» и имеет функцию, называемую «PolarHV Power MOSFET».

Детали детали

Номер произв IXTU4N60P
Описание PolarHV Power MOSFET
Производители IXYS
логотип IXYS логотип 

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IXTU4N60P Даташит, Описание, Даташиты
PolarHVTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA4N60P
IXTP4N60P
IXTU4N60P
IXTY4N60P
V=
DSS
ID25 =
RDS(on)
600
4
2.0
V
A
Ω
TO-263 (IXTA)
Symbol
VDSS
VDGR
VGSS
VGSM
I
D25
IDM
IAR
E
AR
EAS
dv/dt
PD
TJ
TJM
Tstg
T
L
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
T
C
= 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
T
C
=
25°C
TC = 25°C
IS IDM, di/dt 100 A/μs, VDD VDSS,
TJ 150°C, RG = 30 Ω
TC = 25°C
1.6 mm (0.062 in.) from case for 10 s
Plastic body for 10 s
Mounting torque (TO-220)
TO-220
TO-263
Maximum Ratings
600 V
600 V
±30 V
±40 V
G
S
TO-220 (IXTP)
4A
10 A
4A
G DS
15 mJ TO-251 (IXTU)
150 mJ
10 V/ns
89
-55 ... +150
150
-55 ... +150
W
°C
°C
°C
300 °C
260 °C
1.13/10 Nm/lb.in.
4g
3g
G
D
S
TO-252 (IXTY)
G
S
(TAB)
(TAB)
(TAB)
(TAB)
Symbol
Test Conditions
(TJ = 25°C unless otherwise specified)
BV
DSS
V
GS
=
0
V,
I
D
=
250
μA
VGS(th)
VDS = VGS, ID = 100μA
IGSS VGS = ±30 V, VDS = 0 V
IDSS
VDS = VDSS
V =0V
GS
T
J
=
125°C
RDS(on)
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 μs, duty cycle d 2 %
Characteristic Values
Min. Typ. Max.
600 V
3.0 5.5 V
±100 nA
1 μA
50 μA
2.0 Ω
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching (UIS)
rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
© 2006 IXYS All rights reserved
DS99423E(04/06)









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IXTU4N60P Даташит, Описание, Даташиты
Symbol
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Q
g(on)
Q
gs
Qgd
RthJC
RthCS
IXTA4N60P IXTP4N60P
IXTU4N60P IXTY4N60P
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
VDS= 10 V; ID = 0.5 ID25, pulse test
2.8 4.6
S
VGS = 0 V, VDS = 25 V, f = 1 MHz
635 pF
65 pF
5.7 pF
VGS = 10 V, VDS = 0.5 VDSS, ID =0.5 ID25
RG = 30 Ω (External)
25 ns
10 ns
50 ns
20 ns
V = 10 V, V = 0.5 V , I = 0.5 I
GS
DS
DSS D
D25
13.0 nC
6.0 nC
4.0 nC
(TO-220)
1.41°C/W
0.25 °C/W
TO-263 (IXTA) Outline
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C unless otherwise specified)
Min. Typ. Max.
IS VGS = 0 V
4A
ISM Repetitive
12 A
VSD IF = IS, VGS = 0 V,
Pulse test, t 300 μs, duty cycle d 2 %
1.5 V
trr IF = 4 A
-di/dt = 100 A/μs
500 ns
TO-220 (IXTP) Outline
TO-251 (IXTU) Outline
1. Gate
2. Drain
3. Source
4. Drain
Dim.
A
A1
b
b1
b2
c
c1
D
E
e
e1
H
L
L1
L2
Millimeter
Min. Max.
2.19
0.89
2.38
1.14
0.64
0.76
5.21
0.89
1.14
5.46
0.46
0.46
0.58
0.58
5.97 6.22
6.35
2.28
4.57
6.73
BSC
BSC
17.02 17.78
8.89
1.91
0.89
9.65
2.28
1.27
Inches
Min. Max.
.086 .094
0.35 .045
.025
.030
.205
.035
.045
.215
.018 .023
.018 .023
.235 .245
.250
.090
.180
.265
BSC
BSC
.670 .700
.350
.075
.035
.380
.090
.050
Pins: 1 - Gate
3 - Source
2 - Drain
4 - Drain
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844
one or moreof the following U.S. patents: 4,850,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734 B2
6,710,405 B2 6,759,692 7,063,975 B2
6,710,463
6,771,478 B2 7,071,537









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IXTU4N60P Даташит, Описание, Даташиты
4
3.5
3
2.5
2
1.5
1
0.5
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
8V
7V
6V
1 2 3 4 5 6 7 8 9 10
VD S - Volts
Fig. 3. Output Characteristics
@ 125ºC
4
VGS = 10V
3.5 8V
3 7V
2.5
2 6V
1.5
1
0.5
5V
0
0 2 4 6 8 10 12 14 16 18 20
VD S - Volts
Fig. 5. RDS(on) Norm alize d to
0.5 ID25 Value vs . ID
3
2.8 VGS = 10V
2.6
TJ = 125º C
2.4
2.2
2
1.8
1.6
1.4
1.2 TJ = 25º C
1
0.8
0123 4567
I D - Amperes
8
© 2006 IXYS All rights reserved
IXTA4N60P IXTP4N60P
IXTU4N60P IXTY4N60P
Fig. 2. Extended Output Characteristics
@ 25ºC
8
VGS = 10V
7 8V
6
5
7V
4
3
2
1 6V
0
0 3 6 9 12 15 18 21 24 27 30
VD S - Volts
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Tem perature
3.1
2.8 VGS = 10V
2.5
2.2
1.9
ID = 4A
1.6
1.3 ID = 2A
1
0.7
0.4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
-50
Fig. 6. Drain Current vs. Case
Tem perature
-25 0 25 50 75 100 125 150
TC - Degrees Centigrade










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IXTU4N60PPolarHV Power MOSFETIXYS
IXYS

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