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CEB93A3 PDF даташит

Спецификация CEB93A3 изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEB93A3
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEB93A3 Даташит, Описание, Даташиты
CEP93A3/CEB93A3
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 150A, RDS(ON) = 3.0 m@VGS = 10V.
RDS(ON) = 6.0 m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous@ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM
PD
30
±20
150
102
600
120
0.8
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
EAS 648
IAS 36
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.25
62.5
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 4. 2011.Dec.
http://www.cet-mos.com









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CEB93A3 Даташит, Описание, Даташиты
CEP93A3/CEB93A3
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min Typ Max Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
30
1
100
-100
V
µA
nA
nA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
VGS = VDS, ID = 250µA
1
3
VGS = 10V, ID = 50A
2.3 3
VGS = 4.5V, ID = 40A
46
VDS = 10V, ID = 15A
VDS = 15V, VGS = 0V,
f = 1.0 MHz
27
4100
980
600
V
m
m
S
pF
pF
pF
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 15V, ID = 1A,
VGS = 10V, RGEN = 6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 15V, ID = 16A,
VGS = 5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
24
19
128
72
60
12
25
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 20A
100 A
1.2 V
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 1mH, IAS =36A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C
2









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CEB93A3 Даташит, Описание, Даташиты
CEP93A3/CEB93A3
180
VGS=10,9,8,7V
150 VGS=4V
120
90
60
VGS=3V
30
0
0123456
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
200
160
120
80
25 C
40
TJ=125 C
0
0 1.5
3
-55 C
4.5
6 7.5
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
12000
10000
8000
6000
4000
Ciss
2000
0
0
Coss
Crss
5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.2 ID=50A
1.9 VGS=10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
102
101
100
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3










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Номер в каталогеОписаниеПроизводители
CEB93A3N-Channel Enhancement Mode Field Effect TransistorCET
CET

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