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CEB540L PDF даташит

Спецификация CEB540L изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEB540L
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEB540L Даташит, Описание, Даташиты
CEP540L/CEB540L
CEF540L
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
100V, 36A, RDS(ON) = 50m@VGS = 10V.
RDS(ON) = 53m@VGS = 5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 100
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID 36
IDM 120
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
140
0.91
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
EAS 310
IAS 18
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.1
62.5
Units
C/W
C/W
.
Details are subject to change without notice .
1
Rev .1 2010.April.
http://www.cet-mos.com









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CEB540L Даташит, Описание, Даташиты
CEP540L/CEB540L
CEF540L
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 100V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
VGS(th)
RDS(on)
gFS
Ciss
Coss
Crss
VGS = VDS, ID = 250µA
VGS = 10V, ID = 18A
VGS = 5V, ID = 15A
VDS = 25V, ID = 18A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 50V, ID = 18A,
VGS = 10V, RGEN = 5.1
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 80V, ID = 18A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 18A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 1mH, IAS = 15A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
Min
100
1
Typ Max Units
25
100
-100
V
µA
nA
nA
3V
40 50 m
43 53 m
14 S
1295
199
40
pF
pF
pF
13 26 ns
3.1 7 ns
55 110 ns
5 10 ns
40 80 nC
3.7 nC
10 nC
36 A
1.3 V
2









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CEB540L Даташит, Описание, Даташиты
40
VGS=10,8,6,5V
30
20
VGS=4.0V
CEP540L/CEB540L
CEF540L
40
25 C
30
20
10
0
012345
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
2400
2000
1600
Ciss
1200
800
400 Coss
0 Crss
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
10
TJ=125 C
-55 C
0
0.0 1.0 2.0 3.0 4.0 5.0
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3.0 ID=18A
2.5 VGS=10V
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
102
101
100
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3










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