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Número de pieza | CEB730G | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | CET | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de CEB730G (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
No Preview Available ! CEP730G/CEB730G
CEF730G
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
Type
CEP730G
CEB730G
VDSS
400V
400V
CEF730G
400V
RDS(ON)
1Ω
1Ω
1Ω
ID
5.5A
5.5A
5.5A e
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
G
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS 400
VGS ±30
ID 5.5 5.5 e
IDM f
22 22 e
83 41
PD 0.66 0.32
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.5
62.5
2.5
65
Units
V
V
A
A
W
W/ C
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 1. 2009.Nov.
http://www.cet-mos.com
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet CEB730G.PDF ] |
Número de pieza | Descripción | Fabricantes |
CEB730G | N-Channel Enhancement Mode Field Effect Transistor | CET |
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