DataSheet26.com

CEP13N5 PDF даташит

Спецификация CEP13N5 изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEP13N5
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

4 Pages
scroll

No Preview Available !

CEP13N5 Даташит, Описание, Даташиты
CEP13N5/CEB13N5
CEF13N5
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP13N5
CEB13N5
CEF13N5
VDSS
500V
500V
500V
RDS(ON)
0.48Ω
0.48Ω
0.48Ω
ID
13A
13A
13A d
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
DG
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
Drain Current-Continuous @ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Single Pulsed Avalanche Energy h
Single Pulsed Avalanche Current h
Operating and Store Temperature Range
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263 TO-220F
VDS 500
VGS ±30
ID 13 13 d
ID
IDM e
8 8d
52 52d
214 60
PD 1.43 0.4
EAS 781
IAS 12.5
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.7
62.5
2.5
65
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 1. 2014.Oct.
http://www.cet-mos.com









No Preview Available !

CEP13N5 Даташит, Описание, Даташиты
CEP13N5/CEB13N5
CEF13N5
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS =500V, VGS = 0V
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 6.5A
Forward Transconductance
Dynamic Characteristics c
gFS VDS = 25V, ID =6.5A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 250V, ID =13A,
VGS = 10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 400V,ID = 13A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
ISf
VSDg
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) =6.6A .
g.Full package VSD test condition IS =6.6A .
h.Vdd=50V L=10mH Ias=12.5A
VGS = 0V, IS = 13A
Min
500
2
Typ
0.38
10
2100
220
7
42
62
130
25
50
11
19
Max Units
1
100
-100
V
µA
nA
nA
4V
0.48
S
pF
pF
pF
84 ns
124 ns
260 ns
50 ns
66 nC
nC
nC
13 A
1.4 V
2









No Preview Available !

CEP13N5 Даташит, Описание, Даташиты
CEP13N5/CEB13N5
CEF13N5
24
VGS=10,9,8,7V
20
16
VGS=6V
12
8 VGS=5V
4
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
20
25 C
15
10
5 TJ=125 C
-55 C
0
0 2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2400
2000
Ciss
1600
1200
800
400 Coss
0 Crss
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150 175
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.6 ID=6.5A
2.2 VGS=10V
1.8
1.4
1.0
0.6
0.2
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
101 VGS=0V
100
10-1
0.4
0.6
0.8 1.0 1.2 1.4 1.6
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3










Скачать PDF:

[ CEP13N5.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
CEP13N07N-Channel Enhancement Mode Field Effect TransistorCET
CET
CEP13N10N-Channel Enhancement Mode Field Effect TransistorCET
CET
CEP13N10LN-Channel Enhancement Mode Field Effect TransistorCET
CET
CEP13N5N-Channel Enhancement Mode Field Effect TransistorCET
CET

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск