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CEB10N6 PDF даташит

Спецификация CEB10N6 изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEB10N6
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEB10N6 Даташит, Описание, Даташиты
CEP10N6/CEB10N6
CEF10N6
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP10N6
CEB10N6
CEF10N6
VDSS
600V
600V
600V
RDS(ON)
0.75
0.75
0.75Ω
ID
10A
10A
10A d
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
DG
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
TO-220/263
TO-220F
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS
VGS
ID
IDM e
PD
600
±30
10
6
40
166
1.3
10d
6d
40 d
50
0.4
Single Pulsed Avalanche Energy h
EAS 187.5
Single Pulsed Avalanche Current h
IAS 5
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
0.75
62.5
2.5
65
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2011.Feb
http://www.cet-mos.com









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CEB10N6 Даташит, Описание, Даташиты
CEP10N6/CEB10N6
CEF10N6
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 600V, VGS = 0V
VDS = 480V, Tc = 125 C
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
IGSSF
IGSSR
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 5A
Dynamic Characteristics c
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 300V, ID =10A,
VGS = 10V, RGEN = 25
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 480V, ID = 10A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS f
VSD
VGS = 0V, IS = 10A g
Min
600
2
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature .
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2% .
c.Guaranteed by design, not subject to production testing.
d.Limited only by maximum temperature allowed .
e.Pulse width limited by safe operating area .
f.Full package IS(max) = 6A .
g.Full package VSD test condition IS = 6A .
h.L = 15mH, IAS = 5A, VDD = 50V, RG = 25Ω, Starting TJ = 25 C
Typ
0.65
1760
220
20
32.5
61
150
60
44
7.7
17
Max Units
1
10
100
-100
V
µA
µA
nA
nA
4V
0.75
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
10 A
1.4 V
2









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CEB10N6 Даташит, Описание, Даташиты
CEP10N6/CEB10N6
CEF10N6
12
10 VGS=10,9,8,7,6,5V
8
6
4
2 VGS=4V
0
0 5 10 15 20 25 30
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
12
10
8
6
4
2
TJ=125C
0
0 1.5
25 C
3.0
-55 C
4.5 6.0
7.5
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
2400
2000
Ciss
1600
1200
800
400
0
0
Coss
Crss
5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
3.0 ID=5A
2.5 VGS=10V
2.0
1.5
1.0
0.5
0.0
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
101 VGS=0V
100
10-1
0.4
0.6
0.8 1.0 1.2 1.4 1.6
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3










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