CEP02N6G Datasheet PDF - CET
| Part Number | CEP02N6G | |
| Description | N-Channel Enhancement Mode Field Effect Transistor | |
| Manufacturers | CET | |
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CEP02N6G/CEB02N6G
CEF02N6G
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
Type
CEP02N6G
CEB02N6G
CEF02N6G
VDSS
600V
600V
600V
RDS(ON)
5Ω
5Ω
5Ω
ID
2.2A
2.2A
2.2A d
@VGS
10V
10V
10V
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead free product is acquired.
D
DG
GS
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
CEF SERIES
TO-220F
S
ABSOLUTE MAXIMUM RATINGS
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
Drain Current-Pulsed a
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
Tc = 25 C unless otherwise noted
Symbol
Limit
TO-220/263
VDS 600
VGS ±30
ID
2.2
1.4
IDM e
8.8
60
PD 0.48
TO-220F
2.2 d
1.4d
8.8 d
33
0.26
Single Pulsed Avalanche Energy g
Single Pulsed Avalanche Current g
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
11.25
1.5
-55 to 150
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2.1
62.5
3.8
65
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 5. 2011.Feb
http://www.cet-mos.com
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Part DetailsOn this page, you can learn information such as the schematic, equivalent, pinout, replacement, circuit, and manual for CEP02N6G electronic component. |
| Information | Total 4 Pages | |
| Link URL | [ Copy URL to Clipboard ] | |
| Download | [ CEP02N6G.PDF Datasheet ] | |
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