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CEB6056 PDF даташит

Спецификация CEB6056 изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEB6056
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEB6056 Даташит, Описание, Даташиты
CEP6056/CEB6056
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 100A, RDS(ON) = 6.2m@VGS = 10V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous
Drain Current-Pulsed a
ID 100
IDM 360
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
100
0.66
Single Pulsed Avalanche Energy d
Single Pulsed Avalanche Current d
Operating and Store Temperature Range
EAS
IAS
TJ,Tstg
272
33
-55 to 175
Units
V
V
A
A
W
W/ C
mJ
A
C
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
1.5
62.5
Units
C/W
C/W
Details are subject to change without notice .
1
Rev 2. 2011.Dec
http://www.cet-mos.com









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CEB6056 Даташит, Описание, Даташиты
CEP6056/CEB6056
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
BVDSS
IDSS
IGSSF
IGSSR
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 20A
gFS
Ciss
Coss
Crss
VDS = 25V, ID = 50A
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 50A,
VGS = 10V, RGEN = 3.6
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 48V, ID = 50A,
VGS = 10V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 50A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 0.5mH, IAS = 33A, VDD = 24V, RG = 25Ω, Starting TJ = 25 C
Min
60
2
Typ
5
21
3215
375
215
27
15
58
15
77
15
30
Max Units
1
100
-100
V
µA
nA
nA
4V
6.2 m
S
pF
pF
pF
54 ns
30 ns
116 ns
30 ns
100 nC
nC
nC
100 A
1.3 V
2









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CEB6056 Даташит, Описание, Даташиты
30
VGS=10,9,8,7,6V
25
20 VGS=5V
15
10
5 VGS=4V
0
0123456
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
CEP6056/CEB6056
140
25 C
105
70
TJ=125 C
35
-55 C
0
0 2 4 6 8 10
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
4800
4000
3200
Ciss
2400
1600
800 Coss
0 Crss
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.6 ID=20A
2.2 VGS=10V
1.8
1.4
1.0
0.6
0.2
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
101
100
10-1
0.4 0.6 0.8 1.0 1.2 1.4
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3










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CEB6056N-Channel Enhancement Mode Field Effect TransistorCET
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