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CEB6086L PDF даташит

Спецификация CEB6086L изготовлена ​​​​«CET» и имеет функцию, называемую «N-Channel Enhancement Mode Field Effect Transistor».

Детали детали

Номер произв CEB6086L
Описание N-Channel Enhancement Mode Field Effect Transistor
Производители CET
логотип CET логотип 

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CEB6086L Даташит, Описание, Даташиты
CEP6086L/CEB6086L
N-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
60V, 72A, RDS(ON) = 10m@VGS = 10V.
RDS(ON) = 13.5m@VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability.
Lead-free plating ; RoHS compliant.
TO-220 & TO-263 package.
D
G
S
CEB SERIES
TO-263(DD-PAK)
G
D
S
CEP SERIES
TO-220
G
D
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedz
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
VDS 60
VGS ±20
Drain Current-Continuous @ TC = 25 C
@ TC = 100 C
ID
72
51
Drain Current-Pulsed a
IDM 288
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
PD
75
0.5
Single Pulsed Avalanche Energy d
EAS 132
Single Pulsed Avalanche Current d
IAS 23
Operating and Store Temperature Range
TJ,Tstg
-55 to 175
Thermal Characteristics
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Limit
2
62.5
Units
V
V
A
A
A
W
W/ C
mJ
A
C
Units
C/W
C/W
This is preliminary information on a new product in development now .
Details are subject to change without notice .
1
Rev 2. 2012.Jan
http://www.cet-mos.com









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CEB6086L Даташит, Описание, Даташиты
CEP6086L/CEB6086L
Electrical Characteristics Tc = 25 C unless otherwise noted
Parameter
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics b
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Dynamic Characteristics c
Symbol
Test Condition
BVDSS
IDSS
IGSSF
IGSSR
VGS(th)
RDS(on)
VGS = 0V, ID = 250µA
VDS = 60V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
VGS = VDS, ID = 250µA
VGS = 10V, ID = 20A
VGS = 4.5V, ID = 10A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics c
Ciss
Coss
Crss
VDS = 25V, VGS = 0V,
f = 1.0 MHz
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
VDD = 30V, ID = 20A,
VGS = 10V, RGEN = 4.7
Turn-Off Fall Time
tf
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs
VDS = 48V, ID = 20A,
VGS = 4.5V
Qgd
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage b
IS
VSD
VGS = 0V, IS = 20A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.L = 0.5mH, IAS =23A, VDD = 24V, RG = 25, Starting TJ = 25 C
Min
60
1
Typ Max Units
1
100
-100
V
µA
nA
nA
3V
8 10 m
10 13.5 m
2815
235
165
pF
pF
pF
19 38 ns
10 20 ns
75 150 ns
12 24 ns
32 42 nC
7 nC
18 nC
62.5 A
1.2 V
2









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CEB6086L Даташит, Описание, Даташиты
CEP6086L/CEB6086L
40
VGS=10,8,6V
32
100
80
24 60
16
8
VGS=3V
0
01 23 4
VDS, Drain-to-Source Voltage (V)
Figure 1. Output Characteristics
40
25 C
20 TJ=125 C
-55 C
0
02468
VGS, Gate-to-Source Voltage (V)
Figure 2. Transfer Characteristics
3600
3000
Ciss
2400
1800
1200
600 Coss
0 Crss
0 5 10 15 20 25
VDS, Drain-to-Source Voltage (V)
Figure 3. Capacitance
1.3 VDS=VGS
1.2 ID=250µA
1.1
1.0
0.9
0.8
0.7
0.6
-50 -25 0 25 50 75 100 125 150
TJ, Junction Temperature( C)
Figure 5. Gate Threshold Variation
with Temperature
2.2 ID=20A
1.9 VGS=10V
1.6
1.3
1.0
0.7
0.4
-100 -50 0 50 100 150 200
TJ, Junction Temperature( C)
Figure 4. On-Resistance Variation
with Temperature
VGS=0V
102
101
100
0.6 0.8 1.0 1.2 1.4 1.6
VSD, Body Diode Forward Voltage (V)
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3










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Номер в каталогеОписаниеПроизводители
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